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    請使用永久網址來引用或連結此文件: http://ir.lib.ncu.edu.tw/handle/987654321/6774


    題名: 二氧化鈦光學薄膜在熱回火過程的光學和機械特性之研究Investigation;of Thermal Annealing on the Optical and Mechanical Properties of TiO2 Thin Films
    作者: 陳錫釗;Hsi-Chao Chen
    貢獻者: 光電科學研究所
    關鍵詞: 熱回火;二氧化鈦薄膜;殘留應力;residual stress;titanium oxide thin films;thermal annealing
    日期: 2005-12-21
    上傳時間: 2009-09-22 10:28:08 (UTC+8)
    出版者: 國立中央大學圖書館
    摘要: 本論文探討熱回火處理對二氧化鈦(TiO2)光學薄膜的光學特性,殘留應力的機械性質和微觀柱狀結構等影響。光學特性是經由穿透光譜加以判讀,殘留應力的量測則是透過自己架設的相位偏移式干涉儀。在微觀結構方面, X光繞射儀判斷薄膜內部的結晶狀況,X光光電子能譜儀可以了解熱回火過程的氧化模態變化,掃描式電子顯微鏡可以觀察不同熱回火溫度的柱狀微觀結構變化,原子力顯微鏡可以觀看膜質的表面輪廓和粗糙度,顯微干涉儀可量測較大面積的表面粗糙度。 在TiO2光學薄膜的製鍍過程中,選擇不同的基板溫度;發現基板溫度為150℃的TiO2光學薄膜,在不同溫度的熱回火中,不穩定的氧化鍵會斷裂形成次氧化鍵,隨熱回火溫度增加,會再度氧化為氧化鍵。在200℃的熱回火溫度時有最小的殘留應力,因此次氧化鈦在熱回火過程中扮演消除殘留應力的緩衝功能。在穿透光學頻譜、殘留應力、表面粗糙度變化和微觀結構觀察中,發現TiO2光學薄膜製鍍在基板溫度200℃和250℃中比150℃來的穩定。 在製鍍的方式中,選擇離子輔助電子槍蒸鍍法,射頻離子濺鍍和直流磁控濺鍍法等三種鍍膜方式製鍍TiO2光學薄膜,可以發現濺鍍出來的TiO2光學薄膜較為穩定。對不同的基板溫度製鍍出來的TiO2光學薄膜做再回火穩定度研究,發現再回火過程中,殘留應力變化量變小,不會高低起伏變化很大,表示膜質已經達到穩定的狀態。 綜合上述研究,對製鍍完的TiO2光學薄膜做熱回火處理,確實可以改變膜質的內部結構,也能使膜質趨向穩定。The effect of the thermal annealing of titanium oxide (TiO2) thin films on the optical properties, residual stress and microstructures were researched in this paper. Optical properties were analyzed by transparent spectra and residual stress was studied by phase-shift interferometer. In microstructure, crystallization was investigated by X-ray diffraction. The phase transformation during thermal annealing was studied by X-ray photo-electronic spectroscopy. Scanning electron microscopy was used to observe the status of column structure. Atomic force microscopy studied the profile of surface. Microscopy interferometer could get the roughness for large area. We deposited the TiO2 thin films by different substrate temperature. At the substrate temperature of 150℃, the unstable TiO2 would break and form sub-titanium oxide by increasing temperature of thermal annealing. The smallest residual stress exited at the annealing temperature of 200℃, so the sub-titanium oxide could relax the residual stress by different Young’s module. The TiO2 thin films deposited at substrate temperature of 200℃ and 250℃ were more stability than 150℃. Three different types deposited the TiO2 thin films—E-gun evaporation with IAD, RF ion-beam sputter, and DC magnetron sputter. The properties at both sputters were more stability than evaporation. In the reliability test, the variations of residual stress by the re-baking were small than before. These results told us that TiO2 thin films already got constant by thermal annealing. In a word, the thermal annealing has improved the microstructure of the TiO2 thin films result that they were more stability than before.
    顯示於類別:[光電科學研究所] 博碩士論文

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