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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/6782


    Title: 佈植碳離子於氮化鎵/氮化銦鎵多重量子井發光二極體之特性研究;Photoluminescence studies of Carbon-Implanted GaN/InGaN M.Q.W. LED
    Authors: 楊宇智;Ue-Zhi Yang
    Contributors: 光電科學研究所
    Keywords: 佈植;;氮化鎵;發光二極體;光激發光譜;黃光發射;Carbon;yellow luminescence;GaN;LED;photoluminescence
    Date: 2004-07-07
    Issue Date: 2009-09-22 10:28:21 (UTC+8)
    Publisher: 國立中央大學圖書館
    Abstract: 本文實驗在研究碳離子佈值於氮化鎵/氮化銦鎵多重量子井發光二極體之特性研究,以30keV、55keV、130keV 不同能量佈植,形成5×1016,5×1018 cm-3不同佈植濃度,佈植在氮化鎵/氮化銦鎵多重量子井發光二極體上濃度為5×1017cm-3 之P型氮化鎵,藉以形成碳離子佈植後的黃光發射特性,進而達成藍黃雙光渾成之白光發光二極體之製作技術開發。 光特性方面,利用光激發光譜(photoluminescence)的量測顯示,隨著碳離子佈植濃度的大於p型氮化鎵摻雜鎂的濃度時,本身p型氮化鎵的藍光發光機制(2.8eV)減弱,並開始有黃光放射的發光機制生成,而配合適合熱處理的修復,得到1050oc為最佳黃光放射修復溫度。 在電性方面, 根據霍爾效應特性量測(Hall effect measurement)顯示,佈植的碳離子濃度一旦大於p型氮化鎵的電洞濃度10倍以上,試片轉變為n 型的氮化鎵。 發光二極體製作方面,由於P型氮化鎵被佈植區域因離子轟擊所造成損害及高濃度佈植轉變為n型之考量,本文採用網狀方格佈植結構的P型電極設計製作碳離子佈植於氮化鎵/氮化銦鎵多重量子井發光二極體,經發光二極體元件完成後量測其電激發光光譜,確實量得碳離子佈植所形成之黃光放射,證明以佈植方式形成白光二極體的可 能性。 The photoluminescence properties of Carbon ion implantation into p-type GaN followed by rapid thermal annealing (RTA) in N2 ambient have been studied. By varying implantation concentrations, the p-type GaN can be converted into n-type GaN. Photoluminescence studies show that a green emission band could be observed from Cimplanted GaN:Mg. It was shown that such a green emission is related to the yellow luminescence observed from epitaxially grown C-doped GaN. The fabrication and characterization of C-implanted InGaN /GaN MQW LED was reported. The EL spectra obtained from the C-implanted LED device operated at 8V exists the peaks centered at 458nm and 525nm.
    Appears in Collections:[光電科學研究所] 博碩士論文

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