奈米矽鍍膜應用於氮化鎵藍光二極體By; coating Si nanoclusters embed in SiO2 with GaN LED

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/6785

Title:	奈米矽鍍膜應用於氮化鎵藍光二極體By;coating Si nanoclusters embed in SiO2 with GaN LED
Authors:	魏志豪;Gui-Hao Wei
Contributors:	光電科學研究所
Keywords:	鍍膜;二氧化矽;氮化鎵;藍光二極體;奈米矽;Si nanoclusters;sio2;coating;GaN;LED
Date:	2004-07-07
Issue Date:	2009-09-22 10:28:25 (UTC+8)
Publisher:	國立中央大學圖書館
Abstract:	本實驗的設計是利用電子束蒸鍍系統(E gun)成長二氧化矽薄膜(SiO2 film)並經過高溫熱處理後在薄膜內形成奈米矽聚集，研究此奈米矽聚集的光激發光螢光頻譜(Photoluminescence)特性並將此薄膜應用在氮化鎵(GaN)藍光發光二極體上(LED)。This experiment is about coating a SiO2 film with GaN LED. The SiO2 flim have been annealing 1000℃ 20min and 1000℃ 60min。 We can prove that there exits Si nanoclusters in the SiO2 film when after annealing 800℃ 10min。 In the PL analysis,we can find a YL band peak from SiO2 film when after annealing。
Appears in Collections:	[Graduate Institute of Optics and Photonics] Electronic Thesis & Dissertation

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