中大機構典藏-NCU Institutional Repository-提供博碩士論文、考古題、期刊論文、研究計畫等下載:Item 987654321/6786
English  |  正體中文  |  简体中文  |  全文筆數/總筆數 : 78345/78345 (100%)
造訪人次 : 32691372      線上人數 : 1988
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
搜尋範圍 查詢小技巧:
  • 您可在西文檢索詞彙前後加上"雙引號",以獲取較精準的檢索結果
  • 若欲以作者姓名搜尋,建議至進階搜尋限定作者欄位,可獲得較完整資料
  • 進階搜尋


    請使用永久網址來引用或連結此文件: http://ir.lib.ncu.edu.tw/handle/987654321/6786


    題名: 以光電化學氧化法製作n型砷化?MOS元件及其特性研究;Gate Oxide Layer of n+-GaAs MOS Device Using Photoelectrochemical Oxidation Method
    作者: 張勝雄;Sheng-Hsiung Chang
    貢獻者: 光電科學研究所
    關鍵詞: 砷化镓金氧半元件;electronics device;n-type GaAs MOS Device
    日期: 2004-07-06
    上傳時間: 2009-09-22 10:28:27 (UTC+8)
    出版者: 國立中央大學圖書館
    摘要: 中文摘要 在此論文,我們試著使用光電化學氧化法﹙PEC oxidation method﹚將undoped-Al0.3Ga0.7As氧化。以鹽酸及氨水作為PEC method的電解液,進而以PEC method成長氧化層,此氧化層被稱為PEC氧化層。然後使用高溫爐對PEC氧化層進行熱處理,以提升PEC氧化層的絕緣特性。 首先,利用PEC method的測試來決定氧化undoped-Al0.3Ga0.7As的條件。使用適當的氧化條件成長PEC氧化層,以作為金氧半﹙MOS﹚元件的氧化層。我們製作四組不同氧化層條件的MOS電容,利用此實驗來研究PEC氧化層的材料特性。在MOS電容的電流–電壓量測,得知PEC氧化層的負偏漰潰電場為5.78MV/cm。在MOS電容的電容–電壓量測,並經由計算,得知PEC氧化層與n+型砷化鎵﹙n+-GaAs﹚的界面態位密度約2.55?3.21×1011cm-2eV-1。 最後,以光電化學氧化法生成的PEC氧化層製作n+型空乏式砷化鎵金氧半場效電晶體﹙MOSFET﹚。 Abstract In this thesis, we try to oxidize undoped-Al0.3Ga0.7As and n+-GaAs using the photoelectrochemical oxidation method﹙PEC oxidation method﹚. Hydrochloric acid﹙HCl﹚ and ammonia water﹙NH4OH﹚ were used in PEC method as the electrolyte. Produced oxide by using PEC oxidation method was called PEC oxide. PEC oxides were annealed to improve the insulating properties of PEC oxide. First, we determined the PEC oxidation conditions for undoped- Al0.3Ga0.7As. Then a suitable condition of PEC oxidation method was determined to directly grow an oxide layer, which was used in oxide layer of MOS Device. We fabricated MOS capacitors with various conditions of oxide layer to investigate insulating properties of PEC oxide film and interface state of semiconductor/PEC oxide interface. In IG-VG curve of MOS capacitors, the electric breakdown field is to come to 5.78MV/cm. In C-V curve of MOS capacitors, the interface state density of GaAs/PEC oxide interface were determined by calculation. The interface state density of GaAs/PEC oxide interface is about 2.55~3.21×1011/cm2eV. Finally, the fabrication of the n+-channel depletion mode GaAs MOSFET with the PEC oxidation method has been demonstrated.
    顯示於類別:[光電科學研究所] 博碩士論文

    文件中的檔案:

    檔案 大小格式瀏覽次數


    在NCUIR中所有的資料項目都受到原著作權保護.

    社群 sharing

    ::: Copyright National Central University. | 國立中央大學圖書館版權所有 | 收藏本站 | 設為首頁 | 最佳瀏覽畫面: 1024*768 | 建站日期:8-24-2009 :::
    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - 隱私權政策聲明