在本篇論文中，我們製作了以氮化鎵為材料的光學元件。氮化鎵繞射式的微透鏡的設計是採用有效光程差的方法。製作上是採用灰階光罩的方式來製作，僅需要一次的曝光及顯影，便可將圖樣定義在光阻層上，在透過乾蝕刻的方式，將光阻層上的圖樣轉移到氮化鎵材料層。 最後我們用He-Cd雷射來量測此元件的焦距，所測得的焦距範圍在1260~1650+100微米。 我們亦製作了氮化鎵薄膜光柵。氮化鎵的薄膜是透過金屬氧化物氣象沉積法磊晶在(111)方向的矽基板上。先氮化鎵的薄膜上製作出光柵的圖樣，再來利用濕蝕刻的方法將矽基版移除，最後就可以得到氮化鎵薄膜光柵。氮化鎵薄膜光柵所量測到的結果和模擬的結果非常吻合。 未來可以將此二種元件結合在一起，構成一個以氮化鎵為材料的微光學系統。這將可以應用於藍光或紫外光的光學系統上。 In this thesis, we demonstrate the micro-optics components fabricated in GaN-based materials. GaN diffractive microlenses are designed based on the optical path difference method. Gray-level mask is used to fabricate the diffractive microlenses on GaN epitaxial layer grown on sapphire substrate. The patterns of the microlenses are first formed on the photoresist deposited on GaN. The smooth microrelief on the photoresist is then transferred onto the GaN layer by inductively coupled plasma dry etching technique to form the diffractive microlenses. Three GaN diffractive microlenses are characterized with He-Cd laser, at the wavelength of 442 nm. The measured focal lengths are of the range of 1260~1650+100 ?m. In this work, to our knowledge, gratings on GaN membrane were also first demonstrated. First, GaN with the thickness of 1?m was grown (111)-oriented Si by metal organic chemical vapor deposition. Secondly, photolithography and dry etching are used to define the grating patterns on the GaN layer. The period of the gratings is 20 ?m and the etching depth is 0.15 ?m. The both sides of the sample are covered by Ni-Cr/Au metal thin films. To remove the Si below the gratings, a rectangular window is opened by etching the metal thin films on the back side of the sample. An isotropic wet etchant, HNA (composition of HNO3, HF and CH3COOH), is used to remove the Si in the window. Finally, after removal of the metal thin films by wet etching, the GaN membrane gratings are obtained. Due to the high transparency of the GaN-based materials such as AlGaN and InGaN in blue and UV regions, the stacked GaN-based components can be used in the applications of the UV micro-optics system.