本研究試圖在薄膜成長的光學監控中另闢道路，不以一般Runsheet圖監控，而改以導納軌跡圖。 Runsheet圖監控除了有極值點判斷不易的缺點，其圖形特性也只能看出光強度的變化，對於膜成長的變化亦無法有效掌握。導納軌跡圖本身的圖形特性不僅彌補了這述缺點，關於薄膜的相厚度的觀察更是其獨有。 論文中將以數學及實驗驗證上述特性，並利用其觀察相厚度的特性即時做膜厚補償。 Optical monitoring is the main method for determinating film thickness. Unlike monitoring by runsheet diagram, we raise a new method by admittance diagram. Runsheet has some popular defects such as diffcult to determinate the extreme point and ineffectiveness of observing film growth. Admittance diagram not only overcome these defects, but can oberve the variation of phase thickness. In this thesis, we vertify these qualities mathematically and by experiment. And real-time compensating by the property observing phase
