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    题名: 利用可溶液製程之含硫碳鏈聯噻吩小分子製作高效能有機場效應電晶體;High Performance Solution-Processable Thio-Alkyl Bithiophene (BST)-based Small Molecules for Organic Field Effect Transistors
    作者: 張博欽;Chang,Bo-chin
    贡献者: 化學工程與材料工程學系
    关键词: 有機場效應電晶體;有機小分子半導體;溶液製程;剪切力塗佈法;有機薄膜電晶體;OFET;small molecule;solution process;solution shearing;OTFT
    日期: 2015-07-27
    上传时间: 2015-09-23 10:47:09 (UTC+8)
    出版者: 國立中央大學
    摘要: 聯噻吩(bithiphene)為核心及接上不同側鏈長度的硫碳鏈(thio-alkyl)取代基(BST),並以頭尾端接上雙噻吩並噻吩基團(dithienothiophen-2-yl; DTT)的新型有機小分子半導體DDTT-BST,透過剪切力塗佈(solution-shearing)製作有機場效應電晶體元件。在BST中心上因為分子內的硫··硫作用力會呈現高度平面性的結構,DDTT-BST-6 (SR=SC6H13)的結構排列藉由單晶繞射分析為典型的魚骨狀(herringbone)排列。而DDTT-BST-14 (SR=SC14H29)藉由剪切力塗佈後呈現高度一致性的微緞帶狀(microribbon)晶體且分子結構排列藉由低掠角廣角X光繞射(GIWXD)及電子繞射圖譜(ED)分析可推論從原本魚骨狀排列扭轉成類磚狀(brick-like)排列。在元件電性的表現上,DDTT-BST-6的電洞遷移率為0.07 cm2 V-1 s-1,而DDTT-BST-14最高電洞遷移率達1.7 cm2 V-1 s-1 。為了和DDTT-BST相比較,長碳側鏈基取代的bithiophene (BT)衍伸物 (DDTT-BT; R=C14H29) 製備其電晶體元件,其元件特性相對於共平面性佳的DDTT-BST有顯著上的差異,電洞遷移率只有10-8 cm2 V-1 s-1。以上結果表明DDTT-BST分子內的硫··硫作用力不只可以增強結構共平面性,也可以使溶液法製作晶體有高度一致性進而促進電荷傳遞,可應用於溶液製程之高效能有機場效應電晶體元件上。;New thio-alkyl (SR) substituted bithiophene (BST)-based semiconductors, end-capped with the dithienothio-phen-2-yl (DTT) group, are fabricated for organic field effect transistors (OFETs) via solution-shearing process. The molecular structure of DDTT-BST-6 (SR= SC6H13) is determined by single-crystal X-ray diffraction and exhibits a typical herringbone packing. The BST building block core demonstrated a highly coplanar structure via the intramolecular S(C6H13)∙∙S(thiophenyl) interaction. In contrast, DDTT-BST-14 (SR= SC14H29) exhibits highly aligned microribbon crystal and the molecular structure of DDTT-BST-14 infer to strain from herringbone to brick-like packing in solid state characterized by grazing incident wide angle X-ray diffraction (GIWXD) and electron diffraction (ED). DDTT-BST-6 exhibits the hole mobility of 0.07 cm2 V-1 s-1 whereas DDTT-BST-14 has a highest mobility up to 1.7 cm2 V-1 s-1. For comparison, the alkyl substituted bithiophene (BT) derivative (DDTT-BT; R=C14H29) was prepared, and exhibited a relatively low device performance (~10-8 cm2 V-1 s-1). These results indicate that the intramolecular S··S interaction of DDTT-BST not only enhance backbone coplanarity but induce crystal alignment to promote the path of charge transport, and thus the DDTT-BST have an enhanced electrical properties for high performance solution-processed OFETs applications.
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