在本研究中首先以溶劑工程法探討不同前驅液對鈣鈦礦成膜的影響，並使用混合的前驅液溶劑(GBL及DMSO)溶解CH3NH3PbI3，接者在旋轉塗佈過程中以甲苯作為滴旋溶劑，經過熱處理後可得到平整且緻密的鈣鈦礦膜，並成功地提升元件的效率表現。進一步對鈣鈦礦膜熱處理時間、溫度以及鈣鈦礦層、電子收集層厚度最佳化修飾。此外，滴旋溶劑的處理也會決定最後成膜的關鍵之一，所以對於滴旋溶劑的選擇也是相當重要的，我們也探討了不同滴旋溶劑來處理鈣鈦礦膜，而後應用在CH3NH3Pb(I1-xBrx)3鈣鈦礦層中。本研究在平面異質結構鈣鈦礦太陽能電池中，CH3NH3PbI3以熱處理100oC及1 分鐘下，其元件效率可達12.85%且沒有遲滯現象，CH3NH3Pb(I0.95Br0.05)3熱處理100oC及10分鐘下，其元件效率可達12.55%。最後將製備CH3NH3PbI3最佳化條件應用在平面異質介孔結構太陽能電池中，我們藉者旋轉塗佈轉速調控不同緻密層TiOx厚度、介孔層厚度以及利用TiCl4(aq) 作為後處理修飾二氧化鈦工作電極以提升開環電壓(Voc)與短路電流(Jsc)，使效率提升至14.20%。另一方面，我們嘗試結合FAPbI3在此電池結構中以提升電流，其Jsc為19.93 mA/cm2，效率僅9.85%，(FAPbI3)0.85(MAPbBr3)0.15將Voc從0.838提升至 1.004 V，Jsc為17.48 mA/cm2，效率僅9.71%。;In this study, we first discussed the effect of perovskite film with different precursor solution by solvent engineering process. We used the mix solvent (GBL and DMSO) to dissolve CH3NH3PbI3 then following by toluene drop-casting while spinning. The uniform and dense perovskite layers would formed by thermal process and improve the performance of power- conversion efficiency successfully. Then, the pervoskite film of annealing temperature and time, the thickness of perovskite film and electron collecting layer for optimizing modification were also investigated. In addition, the drop-casting solvent treatment also determined the key of the final perovskite film. It is important that choosing the drop-casting solvent. Therefore, we also discussed it and applied it in CH3NH3Pb(I1-xBrx)3 layer. The result in planer heterojunction structure perovskite solar cells showed that the efficiency could reach 12.85% and 12.55% with no hysteresis by annealing CH3NH3PbI3 layer at 100oC for 1 min and CH3NH3Pb(I0.95Br0.05)3 layer at 100oC for 10 min, respectively. Finally, we applied the optimal conditions of CH3NH3PbI3 layer to mesoscopic heterojunction structure solar cell. We controlled compact layer of TiOx and mesoscopic layer by spin-coating rate and modified TiO2 working electrode by post-treating with TiCl4(aq) to enhance the open-circuit voltage (Voc) and short-circuit (Jsc), and enabled efficiency improved to 14.20%.On the other hand, we try to use the FAPbI3 and (FAPbI3)0.85(MAPbBr3)0.15 in this device structure. But the Jsc and efficiency was barely 19.93 mA/cm2 and 9.85%, 17.48 mA/cm2 and 9.71%, respectively. The Voc improved from 0.838 to 1.004 V by using the latter.
