English  |  正體中文  |  简体中文  |  全文筆數/總筆數 : 80990/80990 (100%)
造訪人次 : 42120086      線上人數 : 1298
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
搜尋範圍 查詢小技巧:
  • 您可在西文檢索詞彙前後加上"雙引號",以獲取較精準的檢索結果
  • 若欲以作者姓名搜尋,建議至進階搜尋限定作者欄位,可獲得較完整資料
  • 進階搜尋


    請使用永久網址來引用或連結此文件: http://ir.lib.ncu.edu.tw/handle/987654321/6815


    題名: 以分子動力學模擬鋁薄膜成長;A MD simulation of aluminum thin film growth
    作者: 鄭雅云;Ya-Yun Cheng
    貢獻者: 光電科學研究所
    關鍵詞: ;分子動力學;MD;aluminum
    日期: 2004-06-23
    上傳時間: 2009-09-22 10:29:14 (UTC+8)
    出版者: 國立中央大學圖書館
    摘要: 摘 要 由以往的實驗經驗中發現,薄膜的膜質結構與表面粗糙度與入射源有相當大的關聯,例如入射原子的動能及入射角度。基板的溫度也會影響膜質的結構。本文以分子動力學為基礎架構一個三維的模擬系統,以原子嵌入法作為鋁原子間的勢能函數,模擬鋁薄膜成長時的暫態行為及薄膜膜層中原子堆疊的幾何結構,藉由改變環境參數,如入射粒子動能、入射角度及基板溫度觀察薄膜的生長過程,希望藉由模擬的結果探討以上三種環境因素對膜質結構的影響。進而改善製鍍薄膜的技術,使得製鍍的成品性質更加良好。 Abstract The morphology and microstructure of metallic thin films synthesized by physical vapor deposition are known to be sensitive functions of the incident flux, its angular distribution and kinetic energy as well as the substrate temperature. Using an embedded atom method to represent the atomic interactions, three-dimensional molecular dynamics simulations have been conducted to identify the role of these variables upon surface morphology involution during Aluminum deposition. The results reveal increasing incident atoms’ energy in the range 0.1-3.0ev range significantly reduce vacancy formation. Increases incident angle will increase vacancy formation. During substrate temperature from 300K to 500K, increasing the temperature reduces surface roughness. However, when substrate temperature larger than 500 K, vacancy formation by hillock. Using Ta atom as a surfactant to reduce surface roughness have been simulated.
    顯示於類別:[光電科學研究所] 博碩士論文

    文件中的檔案:

    檔案 大小格式瀏覽次數


    在NCUIR中所有的資料項目都受到原著作權保護.

    社群 sharing

    ::: Copyright National Central University. | 國立中央大學圖書館版權所有 | 收藏本站 | 設為首頁 | 最佳瀏覽畫面: 1024*768 | 建站日期:8-24-2009 :::
    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - 隱私權政策聲明