本實驗成功地利用自組裝奈米球微影法製備出大面積且規則排列的多晶β-FeSi2奈米顆粒於(001)矽單晶基材上。透過TEM的電子繞射圖中之繞射環鑑定，搭配在192及246.5 cm-1的拉曼散射光譜訊號證實了β-FeSi2的生成。經由實驗結果推論，本研究要能做出β-FeSi2之溫度條件至少要高於800 oC，由於太高溫會生成SiOx奈米線，若在900 oC的退火溫度嘗試改變退火持溫時間搭配製作適當厚度的鐵金屬點陣列，將更有機會生成單晶的β-FeSi2。 ;Known metal silicide with a high melting point, high thermal stability and low resistivity, etc., metal silicide has been actively and increasingly widespread application in the integrated circuit manufacturing process and electronic components. Where β-FeSi2 addition to being capable of having a direct semiconductor silicon at room temperature than at the same time also has many advantages and can be applied in the field, although many experts and scholars have been attracted into their studies, but are due to the single crystal β-FeSi2 production is not easy, but it can not provide a stable excellent properties for practical application side. However, the rules make a big area of metal nano-ordered phase change point to explore its nature and the substrate or between the change will have higher credibility has become a consensus, consider this laboratory has ordered production of large area the ability of metal nano dots, and metal nano dot array can be compared to a large area of the metal film and the silicon substrate to the response of the concept more direction from progresses, we expect this reaction mechanism is different from trying to improve the crystallinity of the β-FeSi2.
The experiment successfully using self-assembled nano-lithography ball Preparation of a polycrystalline β-FeSi2 nano-particles large and regular arrangement of (001) silicon single crystal substrate. Identified by TEM electron diffraction ring in the diffraction pattern, Raman scattering spectra with signals 192 and 246.5 cm-1 confirmed the generation of β-FeSi2. By inference results of this study should be able to make the temperature conditions of at least β-FeSi2 than 800 oC, due to the high temperature into SiOx nanowires, if the annealing temperature at 900 oC try to change the annealing temperature and time with the production of appropriate support ferrous metal dot arrays thickness, will have the opportunity to generate a single crystal of β-FeSi2.
