聲波應力感測薄膜整合至具積體化光檢測器之矽光學平台;Monolithic Integration of Photo-detector on Silicon Optical Bench with Acoustic Sensing Membrane

NCU Institutional Repository > 理學院 > 光電科學研究所 > 博碩士論文 > Item 987654321/68334

jsp.display-item.identifier=請使用永久網址來引用或連結此文件: http://ir.lib.ncu.edu.tw/handle/987654321/68334

题名:	聲波應力感測薄膜整合至具積體化光檢測器之矽光學平台;Monolithic Integration of Photo-detector on Silicon Optical Bench with Acoustic Sensing Membrane
作者:	黃靖麟;Huang,Ching-lin
贡献者:	光電科學與工程學系
关键词:	波導;光檢測器;離子佈植
日期:	2015-07-28
上传时间:	2015-09-23 11:20:19 (UTC+8)
出版者:	國立中央大學
摘要:	本研究中提出一個矽波導光學平台，成功的將面射型雷射、光學檢測器及應力感測薄膜整合於一個元件中，達到一個具高封裝容忍度、低光學損耗的光學平台，驗證了未來應用於光學式麥克風的可行性。矽光學平台主要是以半導體製程方式製作出具45°面的矽基波導並定義高分子聚合物及空氣導溝於結構中，於接收端佈植磷離子使之形成P-N接面作為光學檢測器，最後採用覆晶封裝技術將面射型雷射、應力感測薄膜整合於矽基光學感測平台中，當光學感測平台受到外部作用力，導致應力感測薄膜的薄膜因此作用力而產生應力位移量，進而影響矽基光學波導中的光通量，並透過離子佈植的方式檢測其光通量的變化，解析外部的慣性力。矽基光學感測平台中，離子佈植的光檢測器響應度為0.3 A/W，以單模光纖光源入射於光學波導中的損耗，其得到的光電流值為155 A，效率為-3.8 dB，而封裝應力感測薄膜後插入損耗，其光電流值為125 A，效率為-4.8 dB。優化光學導波平台特性後，將面射型雷射及應力感測薄膜封裝於矽基光學感測平台，其得到的光電流值為96.9 A，效率為-3.3 dB，光暗電流訊雜比為20 dB。 ;In this research, we proposed a guided-wave silicon optical bench, which successfully integrates VCESL, sensing membrane and photo-detector for photo-acoustic sensor application. Such a optical bench has advantages including: high assembly tolerance, low optical loss, and monolithic photo-detector. The guided wave silicon optical bench has a 45° reflector to efficiently couple the 850 nm light emitted by VCSEL in to polymer waveguide. The sensing membrane is inserted into the air trench on optical bench and the vibration is caused by external inertial force. The vibration of sensing membrane results a variation of optical flux monitored by monolithic photo-detector fabricated by ion implantation. The monolithic photo-detector has a high responsivity of 0.3 A/W. When the light source emit into waveguide via SMF in this system, the .optical current is 125 mA. After optimization, the optical bench obtains optical current of 96.9 mA and efficiency of -3.3 dB after integrated VCSEL and sensing membrane by flip-chip bonding. The SNR of photo and dark current is 20 dB. Such a guided wave silicon optical bench provides a solution for photo-acoustic sensor development.
显示于类别:	[光電科學研究所] 博碩士論文

文件中的档案:

档案	描述	大小	格式	浏览次数
index.html		0Kb	HTML	403	检视/开启

在NCUIR中所有的数据项都受到原著作权保护.

社群 sharing

数据加载中.....