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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/68418

    Title: 單晶銅成長石墨烯及其可撓性之研究;Research of the graphene growth on single crystal copper and its flexibility
    Authors: 紀堡鐘;Chi,Bao-Chung
    Contributors: 光電科學與工程學系
    Keywords: 石墨烯;化學氣相沉積法;graphene;CVD
    Date: 2015-08-31
    Issue Date: 2015-09-23 11:33:37 (UTC+8)
    Publisher: 國立中央大學
    Abstract: 石墨烯具有高電子遷移率、高導電性、高穿透性、高機械強度,利用於電子元件製備與透明導電膜研究上受到重視。目前大多使用多晶銅箔利用化學氣相沉積法來製備高品質石墨烯,而不同晶向之銅表面與石墨烯之晶格匹配度不一致,所生長石墨烯單晶會產生不同方向性,導致晶界接合處產生較大接合缺陷,阻礙了電子的傳導,並降低其導電特性。
    ;Graphene is a two-dimensional material composed of carbon atoms arranged in a hexagonal atomic structure. Its advantages are very good transparency, conductivity, excellent mechanical properties and it can be bent arbitrarily. So it achieve a lot of attractions on the applications of the electronic element and the transparent conductive film researches. Many of high quality graphene processes are developed by chemical vapor deposition. However, the grain boundary defects occurred when graphene synthesized on the polycrystalline Cu foil. The polycrystalline Cu grains lead to the different orientation of graphene domains owing to the lattice constant mismatch.

    In this study, the Cu (111) foil has been fabricated by the peel-off method. The graphene domains with a consistency of orientation were synthesized on the single crystal Cu (111) thin film by chemical vapor deposition. And the measurements are including sheet resistance, mobility, transmittance, Raman shift and prove the graphene has better quality. Then flexibility measurements has been applied. It shows a remarkable flexibility to compare with the flexible transparent conductive film (ITO).
    Appears in Collections:[光電科學研究所] 博碩士論文

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