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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/6849

    Title: ITO鍍膜於PET基板上之研究;Research of ITO films on PET
    Authors: 蔡明倫;Min-Lun Tsai
    Contributors: 光電科學研究所
    Keywords: 氧化銦錫;電子槍蒸鍍;磁控濺鍍;離子助鍍;電漿;magnetron sputter;ITO;e-beam evaporation;Indium Tin Oxide;plasma;IAD
    Date: 2005-07-07
    Issue Date: 2009-09-22 10:30:11 (UTC+8)
    Publisher: 國立中央大學圖書館
    Abstract: 我們探討不同的鍍膜系統製程對於ITO薄膜的影響與差異。發現電子槍蒸鍍加上IAD使得膜層更加緻密,但仍不如磁控濺鍍。於濺鍍系統上鍍製ITO薄膜於PET基板上,並改變不同的實驗參數,可得到一最佳參數:氧流量3sccm,濺鍍功率500w,於可見光範圍平均穿透率80%,電阻約5*10-4。並進一步利用電漿的預處理或後處理,以及離子源輔助濺鍍等方法,觀察處理之後的影響,發現於紅外光波段的穿透率皆有下降,且折射率增加,表示膜層變得更加緻密。但消光係數卻提升,可能是缺陷的增加。 We research the influence and difference of ITO thin film coating with different coating system and coating condition. We found that coating with e-beam evaporation with IAD makes film denser, but the effect is not good as magnetron sputtering. Coating ITO thin film on PET with sputtering system and different coating parameter, we can get a bit set of parameter: Oxygen flow 3sccm, sputtering power 500w. With such coating parameter, we can have sample with average 80% transmittance at visible range and 5*10-4.Observing the samples coating by sputter with IAD and further plasma pre-treating or post-treating, we found that the average transmittance at IR range drops and refractive indices increases, indicating that the film become denser. However the extinction coefficient rises that may due to the increase of the defect.
    Appears in Collections:[光電科學研究所] 博碩士論文

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