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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/68962

    Title: MOCVD創新進氣系統設計模擬分析
    Authors: 房子陽;Fang,Zih-Yang
    Contributors: 機械工程學系
    Keywords: 化學氣相沉積;進氣設計;數值模擬;MOCVD reactor;simulation;inlet design
    Date: 2015-07-15
    Issue Date: 2015-09-23 14:47:30 (UTC+8)
    Publisher: 國立中央大學
    Abstract: 有機金屬化學氣相沉積法(Metal–Organic Chemical Vapor Deposition, MOCVD)為目前製作LED最重要的技術之一,各家廠商使用不同的進氣方式與腔體設計使得腔體中可以有均勻的熱流場,形成良好的薄膜成長情形。本研究採用COMSOL模擬軟體進行分析與設計,研究內容主要分為兩個部分,第一個部分為改善Veeco垂直式的進氣腔體中氣體利用率不佳的問題,透過三角導流板(triangular barrier)與水平出氣口的設計提升載盤上的平均薄膜成長速率、均勻性以及均勻面積,使得Veeco腔體可以有更佳的氣體利用率。第二部分為改善Aixtron水平式進氣腔體中自旋機構因顆粒堆積造成穩定性不足需要停機維修的情形,透過H2 / TMG進氣口檔板、斜面邊壁設計以及弧面邊壁設計,使得Aixtron腔體在不需自旋機構的情況下,可以擁有好的平均薄膜成長速率、均勻性以及較大均勻面積。;Metal–Organic Chemical Vapor Deposition, MOCVD, is one of the most important technologies to manufacture the LED. There are different methods to get uniform thermal-flow field providing good conditions of thin film deposition in different manufacturer. In this study, the numerical method was applied to analyze and design the MOCVD system. In first part, the new design of triangular barrier and horizontal outlet which can enhance the average growth rate, uniformity, and uniform region on the susceptor to improve the problem of the low gas-usage in Veeco system are proposed. In the second part, the new design of the barrier in the group Ⅲ inlet, incline wall and curve wall are proposed to obtain uniform thin film deposition without the wafer spin.
    Appears in Collections:[機械工程研究所] 博碩士論文

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