本研究使用電子迴旋共振化學氣相沉積系統(ECRCVD)製備磊晶矽薄膜，並使用光放射光譜儀(OES)監測電漿物種變化，四極柱質譜儀(QMS)監測電漿中自由基之濃度。藉由改變製程功率、製程壓力、氫稀釋比以及磁場共振位置，並佐以橢圓儀、拉曼光譜儀來分析薄膜之厚度和結晶性，最後將電漿量測結果以及薄膜特性相互比對，了解電漿內部之反應機制，以建立電漿診斷平台。 實驗結果發現製程功率的提升可以使沉積速率增加，但是高功率環境下薄膜之結晶程度會降低。製程壓力的提升會使薄膜沉積速率以及結晶率有上升的趨勢。若增加氫稀釋比，製程中氫氣的蝕刻機制會使薄膜上的結晶率增加，但同時會降低薄膜之沉積速率。最後，藉由調整ECRCVD主磁場電流，可以改變電漿共振區在腔體中的位置，愈大的主磁場電流可使共振區越靠近基板，因此會提升薄膜之沉積速率，但由於離子轟擊的現象會降低薄膜之結晶率。 本研究整合OES和QMS來建立電漿診斷平台，利用其來解析ECRCVD 中電漿之組成以及各粒子間之反應機制，並藉由改變各項製程參數來了解對磊晶矽薄膜沉積速率以及結晶性之影響。 ;In this study, OES (Optical emission spectrometer) was used to diagnose the variation of plasma species, QMS (Quadrupole mass spectrometry) was utilized to determine the concentration of free radicals in plasma, and the epitaxial silicon thin film was deposited by ECR-CVD (electron cyclotron resonance chemical vapor deposition). The film quality such as thickness and crystallinity were investigated by Ellipsometer and Raman Spectrometer. The relationship between the film quality and plasma characteristics with varying process parameters (microwave power, working pressure, magnetic field resonance position and dilution ratio) was discussed. The results show that the deposition rate will increase with the increasing of microwave power, but the crystallinity will decrease at high microwave power. High process pressure will cause high deposition rate and crystallinity. If the hydrogen dilution ratio is enhanced, the mechanism of hydrogen etching will cause the increasing of crystallinity, but decrease the deposition rate. Finally, larger magnetic coil current will cause better deposition rate because the plasma zone is close to substrate, but the ion bombardment effect will cause worse crystallinity. Consequently, the research integrates the OES and QMS to analyze the mechanism of ECR plasma, and by adjusting the process parameters, the property of epitaxial silicon thin film is determined.
