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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/68974

    Title: 利用四極柱質譜儀與光放射光譜儀進行磊晶矽薄膜於ECR-CVD之電漿診斷研究
    Authors: 楊繼仁;Yang,Chi-ren
    Contributors: 機械工程學系
    Keywords: ECR-CVD;電漿診斷;磊晶矽
    Date: 2015-07-21
    Issue Date: 2015-09-23 14:49:05 (UTC+8)
    Publisher: 國立中央大學
    Abstract: 本研究使用電子迴旋共振化學氣相沉積系統(ECRCVD)製備磊晶矽薄膜,並使用光放射光譜儀(OES)監測電漿物種變化,四極柱質譜儀(QMS)監測電漿中自由基之濃度。藉由改變製程功率、製程壓力、氫稀釋比以及磁場共振位置,並佐以橢圓儀、拉曼光譜儀來分析薄膜之厚度和結晶性,最後將電漿量測結果以及薄膜特性相互比對,了解電漿內部之反應機制,以建立電漿診斷平台。
    本研究整合OES和QMS來建立電漿診斷平台,利用其來解析ECRCVD 中電漿之組成以及各粒子間之反應機制,並藉由改變各項製程參數來了解對磊晶矽薄膜沉積速率以及結晶性之影響。
    ;In this study, OES (Optical emission spectrometer) was used to diagnose the variation of plasma species, QMS (Quadrupole mass spectrometry) was utilized to determine the concentration of free radicals in plasma, and the epitaxial silicon thin film was deposited by ECR-CVD (electron cyclotron resonance chemical vapor deposition). The film quality such as thickness and crystallinity were investigated by Ellipsometer and Raman Spectrometer. The relationship between the film quality and plasma characteristics with varying process parameters (microwave power, working pressure, magnetic field resonance position and dilution ratio) was discussed.
    The results show that the deposition rate will increase with the increasing of microwave power, but the crystallinity will decrease at high microwave power. High process pressure will cause high deposition rate and crystallinity. If the hydrogen dilution ratio is enhanced, the mechanism of hydrogen etching will cause the increasing of crystallinity, but decrease the deposition rate. Finally, larger magnetic coil current will cause better deposition rate because the plasma zone is close to substrate, but the ion bombardment effect will cause worse crystallinity.
    Consequently, the research integrates the OES and QMS to analyze the mechanism of ECR plasma, and by adjusting the process parameters, the property of epitaxial silicon thin film is determined.
    Appears in Collections:[機械工程研究所] 博碩士論文

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