類鑽膜為鑽石結構sp3鍵結與石墨結構sp2鍵結的非晶(Amorphous)碳膜，具有絕佳的機械性質可做為保護膜。但因內應力過大與穿透率不佳，使其在應用上受到侷限。而類鑽膜的摻雜改善了上述缺點，使類鑽膜更利於被使用。 常見的類鑽膜製程為電漿輔助化學氣相沉積法(PECVD)，而本實驗與一般的PECVD架構不同，稱此系統為射頻磁控電漿輔助化學氣相沉積法，可獨立控制電漿功率與負偏壓大小。在此實驗中，利用Raman和FTIR量測分析與驗證類鑽薄膜特性，再利用XPS輔助佐證實驗結果。甲烷與六甲基二矽氧烷作為反應氣體，利用射頻磁控電漿輔助化學氣相沉積法摻雜SiOx於類鑽膜，透過改變六甲基二矽氧烷的流量控制矽氧化合物在膜中的含量，特別是透過SiOx的摻雜。實驗以負偏壓大小為200 V，電漿功率為140 W，HMDSO流量為0.2 sccm下，所鍍製出的類鑽薄膜具有88 %的穿透率，硬度值達12.9 Gpa，其厚度約100 nm。;Diamond like carbon (DLC) films which was consisted of sp3 diamond bonding and sp2 graphite is an amorphous carbon films. It has excellent mechanical property and was used as protective coating. DLC films have high intrinsic compressive stress and low transparency, so it limits its application. Doping of DLC films improved its disadvantage, so it can be used widely. The common process is plasma enhanced chemical vapor deposition (PECVD), but there are some differences in our setup. This setup was called radio frequency magnetron plasma enhanced chemical vapor deposition. It can control plasma power and DC bias independently. We use Raman and FTIR spectrometer to analyze and prove properties of diamond like carbon films in the experiment. XPS measurement assists in evidencing experiment result. DLC films with an addition of SiOx were deposited in radio frequency magnetron plasma enhanced chemical vapor deposition from a mixture of methane and hexamethyldisiloxane (HMDSO). The flow rate of HMDSO was changed in order to vary the SiOx content in the films, particularly doping SiOx in DLC films. 200 V negative self bias, 100 W RF power and 0.2 sccm HMDSO were applied to deposit DLC films with transparency up to 88 % and hardness up to 12.9 Gpa. The thickness of films is about 100 nm.
