近年來熱電相關研究因半導體製程技術及奈米材料發展而突破瓶頸，使ZT優值更加提升，讓熱電研究受到關注。不只在塊材方面，在薄膜與奈米線的研究上也越來越多，但由於目前現有機台僅限於量測塊材熱導係數，在薄膜、奈米線上需要使用有別於傳統塊材的方法量測。因此本篇提供了使用雷射閃光法(Laser Flash Method)量測塊材、薄膜使用3 電性加熱法量測、奈米線則是懸空架構電性加熱量測方法的介紹。從原理、量測建立以及量測正確性著手，最後驗證了ZnO塊材量測結果的正確性、PECVD成長的200 nm SiO2薄膜室溫量測為0.9(W/mK)，符合理論值以及2 μm FeSi2薄膜300K~500K變溫量測結果為5.8~8.1(W/mK)。;In recent years, studies of thermoelectric have broken through the bottleneck due to the development of semiconductor manufacturing technology and the understanding of nano-scale materials. ZT value has been improved not only for bulks, but also for thin-film and nano-wires. But the current machines are limited to measure thermal conductivity for bulk. The measurements for thin-film and nanowire are different from the conventional one. In this thesis, we studied the laser flash method to measure the thermal conductivity of bulk, the 3-Omega method for thin-film and introduced the electrically heating measurement with a floating structure for nanowire. We established the measurement and verified the correction of the results. The measurement results of ZnO bulk were comparable with previous reports, while 200 nm thick SiO2 thin film grown by PECVD in room temperature was measured ~ 0.9 (W/mK), corresponding to the theoretical value. The measurement result of 2 μm FeSi2 thin film from 300K to 500K was 5.8 ~ 8.1 (W/mK).