次微米灰階氮化矽結構對發光二極體光型修整機制之研究Modulating; far-field patterns of LED by using silicon nitride micro structures

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/6923

Title:	次微米灰階氮化矽結構對發光二極體光型修整機制之研究Modulating;far-field patterns of LED by using silicon nitride micro structures
Authors:	梁致遠;Zhi-Yuan Lian
Contributors:	光電科學研究所
Keywords:	光型;發光二極體;氮化矽;灰階;LED;far-field patterns;gray level
Date:	2007-10-01
Issue Date:	2009-09-22 10:32:14 (UTC+8)
Publisher:	國立中央大學圖書館
Abstract:	在本篇論文中，我們利用次微米灰階週期性光柵結構和發光二極體 (light-emitting diodes LED) 整合，在發光二極體表面製作出次微米的週期性氮化矽膜灰階結構，近似陣列式的微光學元件，並且能夠對發光二極體的光型做調制。從分析與模擬的結果得知，利用此週期性結構可控制發光二極體的出光特性，由光型分析看出，我們能使LED出光集中在 ±30°的範圍，亦可使LED在±60° 的範圍均勻出光，因此，我們所提出的次微米灰階光柵結構，可有效的調制LED光型。我們製作結構尺度為次微米光柵，其週期為500 nm，線寬為200 nm，是利用電漿蝕刻等乾式蝕刻法製作出來，不需遷就晶體本身的晶格面，因此，經由設計蝕刻參數可使光柵的形狀做改變，並且可在次波長的尺度下製作出灰階的結構，能拓展灰階結構的應用面。由於灰階週期性光柵本身具有折射率漸變的性質，利用此特性，在微光學元件中，原本需要在結構上方或下方鍍上匹配膜層來修整頻譜，現在僅需利用灰階光柵即可達到類似效果，這對未來次微米結構的整合與設計亦具有更高的自由度與便利性。In our study, we modulate far-field patterns of LED by using silicon nitride micro structures. We use gray level structures as sub-micro optical elements array, and analyze the far-field patterns of LED modulated by silicon nitride sub-micro structures. From our analysis，we can concentrate far-field pattern intensity above 0.8 in ±30° or spread far-field pattern intensity uniformly above 0.8 in ±60° of LED. The purpose of structures is a micron scale, which period is 500 nm and the structures is 200 nm. The structures are etched by Inductively-Coupled-Plasma-Etching System. In our study, the purposed sub-micro silicon nitride gray-level grating can be realized. For the far-field patterns modulation of LED, the sub-micro structures can be integrated in array and fabricated on LED to extend the application of LED optical system.
Appears in Collections:	[Graduate Institute of Optics and Photonics] Electronic Thesis & Dissertation

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