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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/6943

    Title: 表面電漿對於半導體發光元件光萃取效率的影響之探討;Light Extraction Efficiency of Semiconductor Light Emitters based on Surface Plasmon
    Authors: 王灯利;Deng-Li Wang
    Contributors: 光電科學研究所
    Keywords: 發光元件;表面電漿;氮化銦鎵;InGaN;light emitter;surface plasmon
    Date: 2006-06-21
    Issue Date: 2009-09-22 10:32:48 (UTC+8)
    Publisher: 國立中央大學圖書館
    Abstract: 在本論文中,我們簡述表面電漿的發展,並利用電磁波與金屬表面自由電子交互作用之電磁理論,對表面電漿共振現象作闡述。而在實驗方面,我們在發光元件表面設計與製作次波長金屬週期結構,由實驗量測紀錄發光元件在不同結構下的發光光譜,經過光譜數據之整理與比較,我們可確信表面電漿共振現象的存在,但是在發光元件的光萃取效率方面並非只有提升,效率下降的情形也同樣存在,由此可知,結構參數的設計對於表面電漿在發光元件中扮演的角色有著決定性的影響,若能掌握相關設計,將能有效提升發光元件之光萃取效率。 In this thesis we capsule the development and the basic theory of surface palsmon. In the experiment, we design and fabricate sub-wavelength periodic structures onto the InGaN light emitters and record the spectra of InGaN with different structures. In our result, we are sure of the exist of surface plasmon, and we also see that both the increase and the decrease of the light extraction can be found in the experiment. From the result, we can know that the effect of surface plasmon on light emitters depends on the parameters of the added structures, and if the structures can be well designed, we will have a chance to improve the light extraction of semiconductor light emitters.
    Appears in Collections:[光電科學研究所] 博碩士論文

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