本論文是延續3G系統使用的頻段900MHz與1800MHz,對應3GPP長期演進技術Advanced規格中的Band3與Band8頻道作為研究基礎,組合成長期演進技術Advanced的載波聚合(CA, Carrier Aggregation)結構,並以3GPP長期演進技術Advanced定義Band3與Band8工作型態為FDD,因此在band3中設定為分頻多工架構,上行中心頻率1747.5MHz 下行中心頻率1842.5 MHz,以及band8上行中心頻率897.5MHz,下行中心頻率942.5MHz的載波聚合,將射頻前端整合為單一系統封裝SiP (System in Package),並以國研院晶片中心(CIC)四層電路板PCB-FR4製程,再以表面黏著技術(Surface Mount Technology,S.M.T)、將功率放大器(Power Amplifier)、低雜訊放大器(Low-noise amplifier)、表面聲波濾波器(SAW filter)及雙工器(Dip lexer)等主要元件組合在同一片系統上,並且使用 SMD (Surface Mount Device)元件,設計成兩路發射兩路接收(2 Transmit 2 Receive)之射頻前端模組,實現應用在載波聚合(CA, Carrier Aggregation)通道上,功率輸出之1dB 壓縮點(Power Out at 1dB Compression Point)、功率附加效率(Power Added Efficiency,PAE)、誤差向量幅度(Error vector magnitude,EVM)、最大輸出功率(Maximum Output Power)、增益(Gain)、S-parameter結果比較。;his paper is based on the study to extend the use of the frequency range of 900MHz and 1800MHz, which are both used by the 3G system,correspond to Band 3 and Band 8 of the LTE Advance technology to form a Carrier aggregation (CA),which is used in LTE-Advanced。 Since both the Band 3 and 8 support frequency division duplexing (FDD),this paper will make use of aggregation in Band 3 and 8 with uplink center frequency of 1747.5MHz and 897.5MHz respectively to downlink center frequency 1842.5MHz and 897.5MHz respectively。 Furthermore,to have the RF front-end system integrates into a single system in package (SiP)。 Using the PCB-FR4 manufacturing process from National Chip Implementation Center and the Surface Mount Technology (SMT) to combine some of the main components, such as the Power Amplifier (PA), Low-noise amplifier, SAW filter and Diplexer, all into one single system board。In addition,use SMD components to design a front-end system with 2-transmission and 2-receiving module。 To use this design in the above mentioned carrier aggregation channels in order to have the Power Out at 1dB Compression Point、 Power Added Efficiency、 Error vector magnitude、Maximum Output Power、Gain、S-Parameter measured and compared。