半導體光子晶體雷射之研究Semiconductor; Photonic Crystals Laser

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题名:	半導體光子晶體雷射之研究Semiconductor;Photonic Crystals Laser
作者:	張利銘;Li-Ming Chang
贡献者:	光電科學研究所
关键词:	光子晶體;photonic crystals
日期:	2007-06-22
上传时间:	2009-09-22 10:33:08 (UTC+8)
出版者:	國立中央大學圖書館
摘要:	本論文中，我們以平面波展開法(Plane Wave Expansion, PWE) 與有限差分時域法(Finite-Difference Time-Domain, FDTD)模擬分析光子晶體結構與特性。我們利用氮化鎵材料在二維平面上製作光子晶體結構，使光有效侷限於結構中，有效增加二維平面上之自發放射(Spontaneous Emission)。在室溫下架設微光激發光系統(Micro-photoluminescence, Micro-PL)，當雷射激發能量≧0.7 uJ時，成功量得氮化鎵光子晶體之缺陷模態(lambda=371nm)，並證實此為能帶邊緣型光子晶體雷射。另外，Si MOS (Metal-Oxide-Semiconductor)元件方面，已成功量得光激發光(photoluminescence, PL)光譜，其自發放射之中心波長為1.14um，預期藉由改善氧化層與金屬層的匹配後，製作適當的電注入結構，將可以完成以電激發的光子晶體雷射。In this study, photonic crystals have been designed, fabricated, and characterized in GaN bulk materials. The energy dependent measurement showed that the emission peak width can be significantly reduced as the pumping pulse energy was larger than 0.7 uJ at room temperature. The mode at the wavelength of 371 nm emitted from the defect due to the structure disorder unintentionally introduced during the fabrication process of the GaN photonic crystals can be obtained. The photonic band-edge laser was realized. For the Si MOS (Metal-Oxide-Semiconductor) device, we have obtained a spontaneous emission peak at 1.14 um by using photoluminescence measurement. By improving the electronic and luminescent characteristics of oxide layer, the structure might be used to fabricate the electrically pumped Si MOS photonic crystal lasers.
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