在本論文中，我們簡述發光二極體的發展，為了提高發光二極體的發光效率，利用電磁波與金屬表面自由電子交互作用之所產生的表面電漿子，進而對表面電漿與發光主動層之共振現象進行相關的研究。我們在氮化銦鎵多重量子井表面製作不同深度的微米尺度光柵，並且在這些光柵鍍上不同厚度的銀薄膜。量測與紀錄氮化銦鎵多重量子井發光元件在不同結構下光激發螢光光譜，發現微米尺度光柵的深度愈深，亦即越接近主動層時，則光激發螢光強度就愈強；在不同深度的光柵上鍍銀薄膜後，當金屬薄膜愈靠近主動層時其發光效率之提升愈顯著。我們可以確信金屬薄膜與主動層之間距對於表面電漿共振現象有密切的關係。另外隨著銀薄膜的厚度增加，整體發光強度會因銀薄膜的穿透率而下降。由此可知，結構參數的設計對於表面電漿在發光元件中扮演的角色有著決定性的影響，若能掌握相關設計，將能有效提升發光元件之發光效率。In this thesis, we sketch the development of LED. In order to improve the luminescence efficiency of LED, we utilized the effect of surface plasmon. We fabricated gratings with variable periods and depths onto the surface of InGaN MQWs, and deposited the silver thin films of variable thickness on these gratings. Then we measured the photo- luminescence (PL) spectra of InGaN MQWs with surface micro-gratings coated with the silver thin films of variable thickness. We found that deeper depth of this grating, the PL enhancement was stronger. In addition, after the deposition of silver thin film on these gratings with variable depths, the luminescence efficiency enhancement was more apparent when the silver thin films were closer to InGaN MQWs. We can be sure that the distance between silver thin film with InGaN MQWs has close relations to the coupling effect of surface plasmon. The luminescence efficiency decreased with increasing the thickness of silver thin films, due to the transmittance of silver thin film was lower. From all the results, we can find out that the surface plasmon effect related with light emitters was depended on the parameters of the added structures. If these structures can be well designed, we will have a chance to improve the luminescence efficiency of LED.