本篇論文，我們利用Si-rich SiOx發光材料來進行光子晶體雷射的研究，以期能實現整合於基板上的矽基雷射。透過平面波展開法(PWE)與時域有限差分法(FDTD)的模擬計算後，我們得知對於Si-rich SiOx這樣低折射率的材料所製造出的光子晶體結構，可以透過增加作用層的膜厚與空氣孔洞分布的範圍來達到良好的光子侷限，模擬上的Q值可達13114，顯示此材料在光子晶體雷射方面擁有應用的潛力。另外，我們也實際利用光激發光(PL)量測系統量得Si-rich SiOx薄膜的發光波長於680nm，並透過電子束微影技術(E-beam Lithography)於薄膜上製作出光子晶體的結構。未來我們將去除樣品中的矽基板，避免激發出的光子被矽基板所吸收，並在結構中製作出良好的電極來獲得電激發光(EL)的Si-rich SiOx光子晶體雷射。In this thesis, we study the photoluminescence (PL) of Si-rich SiOx materials and try to realize the Si-based photonic crystal laser. The theoretical simulation results obtained by plane wave expansion (PWE) and finite-difference time-domain (FDTD) methods show that the Q-factor can attain to 13114 in Si-rich SiOx photonic crystal structure with low refractive index by means of increasing the thickness of the active layer and modifying the distribution of the air holes to achieve well photon confinement. This result reveals the potential in realization of Si-based photonic crystal laser. The central wavelength of the measured PL spectrum of the sample is 680nm from the Si-rich SiOx film. We fabricate photonic crystal structure on this film using E-beam lithography. In the future, we will remove the Si substrate in order to avoid the absorption of the emitted photons and design the electrodes to carry out electrically pumped Si-rich SiOx photonic crystal lasers.
