偏壓對射頻濺鍍非晶矽太陽能薄膜特性之研究;Research on the properties of amorphous Si thin films using RF bias sputtering

NCU Institutional Repository > 理學院 > 光電科學研究所 > 博碩士論文 > Item 987654321/7092

請使用永久網址來引用或連結此文件: http://ir.lib.ncu.edu.tw/handle/987654321/7092

題名:	偏壓對射頻濺鍍非晶矽太陽能薄膜特性之研究;Research on the properties of amorphous Si thin films using RF bias sputtering
作者:	周明賜;Mingsz-tzu Chou
貢獻者:	光電科學研究所
關鍵詞:	非晶矽太陽能薄膜;偏壓射頻濺鍍;amorphous Si thin films;RF bias sputtering
日期:	2009-01-18
上傳時間:	2009-09-22 10:37:11 (UTC+8)
出版者:	國立中央大學圖書館
摘要:	近年來，隨著能源危機問題和環保議題的崛起，太陽能電池成為未來的替代性能源之一，其中矽薄膜太陽能電池又被認為是非常重要的發展重點，對於非晶矽薄膜太陽能電池中的主動層，即本質層，在太陽能電池中的光電轉換效率扮演著一重要的角色。在非晶矽薄膜的製作上，磁控濺鍍方式是較為環保但薄膜特性較差的製作方法，所以，如何以磁控濺鍍方式製作並提升氫化非晶矽薄膜的特性為本研究之重點。在研究過程中，吾人利用直流電源供應器偏壓於陽極端之射頻磁控濺鍍方式，鍍製氫化非晶矽薄膜，藉此來改善氫化非晶矽薄膜中的矽—氫鍵結比例和減少膜內氫含量比，以及提升光電導特性。在研究結果中發現：當以直流偏壓於陽極端，且偏壓範圍在+10 V ~ +30 V，氫通量為3 sccm時，所鍍製的氫化非晶矽薄膜可得到不錯的光電特性，其光學能隙約為1.7 eV、微結構因子介於0.08 ~ 0.30、膜內氫含量約於15.7 at% ~ 16.4 at%、暗電導小於2.5 × 10-11 Ω-1cm-1、光電導約於1.8 × 10-6 Ω-1cm-1 ~ 5.7 × 10-6 Ω-1cm-1。由此結果可知，利用直流正偏壓於陽極端之射頻磁控濺鍍法，所鍍製的氫化非晶矽薄膜，在運用於非晶矽薄膜太陽能電池中時，將具有不錯的光電轉換效率。In recently, for the energy crisis problem and environmental protection topic, solar cells become one of the substitutability energies. Among the well-known solar cell techniques, silicon thin-film solar cell is considered as an important developing field. The active layer of amorphous silicon thin-film solar cell, i.e. intrinsic layer, plays a crucial role in photoelectric conversion efficiency. To fabricate amorphous silicon thin films, magnetron sputtering method is a cleaner process than CVD. However, the characteristic of the films are poor using magnetron sputtering method. In this study the research point is how to improve the characteristics of hydrogenated amorphous silicon thin films using magnetron sputtering system. In this study, we have applied magnetron sputtering method with DC bias to anode terminal to deposit hydrogenated amorphous silicon thin films. By this way, the microstructure parameter has been improved, the hydrogen content reduced, and the photo-conductivity properties increased significantly in hydrogenated amorphous silicon thin films. The research results show when the DC bias is applied to anode terminal with bias range from +10 V to + 30 V and hydrogen flux 3 sccm, we can obtain good photoelectric characteristics of the hydrogenated amorphous silicon thin films as follows: optical energy: about 1.7 eV; microstructure parameter: 0.08 ~ 0.30; hydrogen content: 15.7 at% ~ 16.4 at%; dark-conductivity: 2.5 × 10-11 Ω-1cm-1 below; photo-conductivity: 1.8 × 10-6 Ω-1cm-1 ~ 5.7 × 10-6 Ω-1cm-1. According to the results, it is possible to fabricate a good photoelectric conversion efficiency of hydrogenated amorphous silicon solar cell based on the hydrogenated amorphous silicon thin film made using magnetron sputtering method with positive DC bias to anode terminal.
顯示於類別:	[光電科學研究所] 博碩士論文

文件中的檔案:

檔案	大小	格式	瀏覽次數

在NCUIR中所有的資料項目都受到原著作權保護.

社群 sharing

資料載入中.....