直流磁控濺鍍氧化膜界面應力之研究;Interface stress of oxidized films by DC magnetron sputtering deposition

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題名:	直流磁控濺鍍氧化膜界面應力之研究;Interface stress of oxidized films by DC magnetron sputtering deposition
作者:	李佳真;Chia-Chen Lee
貢獻者:	光電科學研究所
關鍵詞:	磁控濺鍍;軟性基板;界面應力;軟性電子;magnetron sputtering;flexible substrate;flexible electronic;interface stress
日期:	2009-06-29
上傳時間:	2009-09-22 10:37:13 (UTC+8)
出版者:	國立中央大學圖書館
摘要:	近年來，軟性電子技術的發展為電子產業帶來重大的革命，尤其以軟性顯示器的發展最為迅速，其中軟性基板取代傳統玻璃基板使得消費型電子產品具備輕、薄、短、小的特色而更加便利人們的生活，但是使用軟性基板所衍生而來的應力問題更是極待去解決的一環。本文以直流磁控濺鍍製鍍SiO2與Nb2O5單層膜以及多層膜堆疊在玻璃基板、PET及PC基板上。由硬性基板（玻璃）的薄膜應力理論出發，發展軟性基板的薄膜應力理論，輔以應力實驗量測來尋找最佳的製程參數使單層SiO2與Nb2O5薄膜之光學性質與應力能同時兼顧，此外也加以去探討SiO2/Nb2O5多層膜疊加後的應力變化與膜層間界面應力的關係，最後發展一套理論詮釋多層膜應力行為。 SiO2單層膜實驗最佳製程參數為電壓480 volt，氧氣通量11.1 sccm，相對應應力值為玻璃 -0.37 GPa；PET -0.22 GPa；PC -0.45 GPa。Nb2O5實驗最佳製程參數為功率0.6 kw 氧氣通量為15.3 sccm，相對應應力值為玻璃-0.12 GPa；PET -0.09 GPa；PC -0.18 GPa。在多層膜堆疊實驗發現在不同的基板有相同的趨勢，在SiO2/Nb2O5/sub的情況下界面應力會較Nb2O5/SiO2/sub小甚至有張應力的產生。There has been much focus on flexible display technology, and people life become more convenient because of the flexible electronic technology develops fast recently. The flexible substrate substitution tradition glass substrate causes the expense electronic products to have lightweight, thin, the small characteristic but uses the flexible substrate to grow comes the stress question which is treats extremely solves. The films of SiO2 and Nb2O5 have been deposited on the glass substrate and flexible substrate by DC magnetron sputtering. We develop residual stress theory of flexible substrate based on that of rigid substrate. In addition, we adjust the best parameters for optical constant and residual stress of SiO2 and Nb2O5 film on the glass substrate and flexible substrate. Finally, a simple model for interface stress of SiO2/Nb2O5 multilayer has been proposed. The best parameter of SiO2 is voltage of 480 volt, oxygen flux of 11.1 sccm, and residual stress of -0.37 GPa, -0.22 GPa, -0.45 GPa on the glass, PET, PC substrate, respectively. The best parameter of Nb2O5 is power of 0.6 kw, oxygen flux of 15.3 sccm, and residual stress of -0.12 GPa, -0.09 GPa, -0.18 GPa on the glass, PET, PC substrate, respectively. There is the same trend of the result of multilayer that the smaller interface stress when SiO2/Nb2O5/sub multilayer.
顯示於類別:	[光電科學研究所] 博碩士論文

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