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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/71307


    Title: 可溶性醌型三併環噻吩與聯噻吩高分子有機薄膜電晶體材料之開發
    Authors: 邱彥茹;Chiu,Yen-Ju
    Contributors: 化學學系
    Keywords: 噻吩;有機薄膜電晶體;醌型;thiophene
    Date: 2016-07-25
    Issue Date: 2016-10-13 12:42:28 (UTC+8)
    Publisher: 國立中央大學
    Abstract: 本論文主要可以分為有機薄膜電晶體材料 (OTFT) 和導電高分子。OTFT 材料延續實驗室三併環噻吩 DTTRQ 結構,為 N-type 小分子;P-type 高分子以硫醚鏈聯噻吩為單體聚合而成 P3ST (4)。離子導電高分子結合硫醚鏈聯噻吩和離子基團,為 P3ST-T1 (5) 和 P3ST-T2 (6),期望應用在鋰電池之電極。
    實驗室先前開發的 DTTRQ-6 與 DTTRQ-11,N-type電性表現分別為 0.27 和 0.45 cm2/Vs,此系列還具備 Ambipolar 的性質,像是 DTTRQ-11 與 DDTT-BST (P-type) 混摻,電性皆達到0.1 cm2/Vs。為了探討碳鏈對 DTTRQ 的影響,引入其它碳鏈於併環噻吩主體,開發出可溶性 N-type 的有機化合物 DTTRQ-3 (2) 與 DTTRQ-15 (3),目前載子移動率為 10-2 cm2/Vs。聯噻吩高分子 P3ST 其噻吩骨架帶有硫醚碳鏈且為頭對頭之立體位向,硫之間的作用力會增加分子間的平面性,目前載子移動率達 10-3 cm2/Vs,還可進一步優化。離子導電高分子目前已經聚合成高分子,只需將離子基團修飾於高分子,即可測試其在鋰離子電池的效果。
    ;Two newly developed thiophene-based ionic polymer, P3ST-T1 (5) and P3ST-T2 (6), were prepared for lithium-ion battery (LIBs). Thioalkylated bithiophene (SBT) and 3-alkylated thiophenes bearing ionic group were used as the monomers for polymerization.
    A regiospecific 3-thioalkylated bithiophene-based polymer, P3ST (4) (head, head), was prepared for OTFTs; where the SBT units were used as monomers for Stille polymerization.
    In our previous studies, fuse-thiophene-based quinoidals with different alkyl chains, DTTRQ-6 and DTTRQ-11 exhibit good n-channel mobility of 0.27 and 0.45 cm2/Vs, repectively, via solution shearing. Herein, two new quinoidals DTTRQ-3 (2), DTTRQ-15 (3) were synthesized and characterized for comparison. All these new quinoidals exhibit fairly low LUMO (< -4.1 eV) and thus are potentially air stable n-type materials. DTTRQs also exhibit high and average mobilities in ambipolar OTFTs. For example, DTTRQ-11 (N-type) / DDTT-BST (P-type) blend exhibits hole and electron mobilities greater than 0.1 cm2/Vs.
    The optical and electrochemical properties (HOMO and LUMO) of these materials were characterized by UV-vis and DPV. Thermal properties were investigated by TGA. Currently, these new developed semiconductors in OTFT device studies are still in progress.
    Appears in Collections:[化學研究所] 博碩士論文

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