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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/71310

    Title: 有機無機異質結構白光發光元件研究;Organic/inorganic White Light Emitting Heterostructure
    Authors: 吳彥儒;Wu,Yen-Ju
    Contributors: 化學工程與材料工程學系
    Keywords: 有機無機異質介面;激子;時間解析螢光光譜;時間解析電致發光光譜;organic/inorganic heterostructure;exciton;time-resolved PL;time-resolved EL
    Date: 2016-07-27
    Issue Date: 2016-10-13 12:42:46 (UTC+8)
    Publisher: 國立中央大學
    Abstract: 為了提升發光元件的演色性,使其於照明應用上有更好的發揮空間,有機和無機半導體材料的結合即提供了具有潛能的選擇。有許多研究也指出有機無機異質介面可擁有兩者材料的特性,使其突破原本單一材料在光性與電性上的限制。本研究揭示了一P型有機(F8T2)/P型(氮化鎵)無機異質介面發光元件,與一般電致或光致發光之P-N界面結構不同,我們發現此P-P有機/無機異質介面也能產生有效率的發光現象。
    ;To further increase the emission spectra for higher color rendering index (CRI) of inorganic light emitting diodes, the hybrid organic/inorganic systems may be a better approach to combine the advantages of both organic and inorganic semiconductors to overcome their respective limitations. This study proposed a novel white light device, which is based on the F8T2/GaN multi quantum wells (MQWs) structure, and identified this device combining the organic and inorganic semiconductors with appropriate charge transport and emission properties under an external forward bias. The International Commission on Illumination (CIE) coordinate of the white-light emission from the present device is at (0.28, 0.30), which is very close to the standard white light (0.33, 0.33). The white-light emission is attributed to the combination of two emission regions of GaN MQWs and the F8T2/p-GaN interface. Here, the carrier localization, which is based on the mobility gap and carrier accumulation, is constructed to explain why the p-p junction of this F8T2/p-GaN interface can contribute to the emission.
    The excitation generated excitons and carriers transfer to emission regions while the diffusion and drift flows competitively on short timescales with various relaxation process. With the carrier localization effect, the carrier kinetics and the equilibrium would rearrange before the steady state being achieved. Therefore, the further understanding of carrier dynamics, recombination centers, and losing channels, as well as the proof of the carrier localization can be acquired by using ultrafast techniques of time-resolved photoluminescence (TRPL) and time-resolved electroluminescence (TREL).
    In this study, the properties of carrier localization effect and the hybrid white-light device are reported. The p-p junction of F8T2/p-GaN does work and enhance the recombination rate (short lifetime) and emission efficiency of the device. Our work explores the applicability of polymer/GaN epi-layers emitting diodes for electrical and photonic characteristics, providing a new and easy route for producing and modulating the organic/inorganic white light emitting interface.
    Appears in Collections:[化學工程與材料工程研究所] 博碩士論文

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