本論文製作一系列奈米尺度下巨磁阻(Giant Magneto Resistance)結構樣品，並藉由改變磁場大小及量測Wheatstone bridge電壓差的方式來研究巨磁阻結構中鐵磁層磁矩翻轉變化機制。 依據巨磁阻特性，利用Wheatstone bridge機制來製造具有高低電阻切換的磁電阻結構的感測器，並研究其薄膜結構間隔層(Cu)及固定層(CoFe)對磁矩翻轉機制的影響。 本論文樣品有四種不同薄膜層厚度的組合，其中固定層為3.8nm、4.2nm，間隔層則分別為2.5nm、2.8nm。使用微影製程、電漿濺鍍、回火、磁化，製作具有磁特性的電橋結構，此實驗將使用田口方法(L422)找出在不同厚度的鐵磁層及反鐵磁層的最佳化設計。 ;In this thesis, we fabricate the structure of the sample GMR (Giant MagnetoResistance) under a series of sub-micron scale ,and study the GMR in the ferromagnetic structure of magnetic moment of reversal mechanism changes by using the way between measuring magnetic field changes and the voltage difference Based on GMR properties using a Wheatstone bridge system to make magnetoresistance structure of high/low resistance switching, and to study the influence in spacer layer film structure (Cu) and the Pinned layer (CoFe) of the magnetic moment reversal mechanism. In this thesis, there are four different thickness samples of the spacer layer and pinned layer which the pinned layer thickness are 3.8nm and 4.2nm, and spacer layer thickness are 2.5nm and 2.8nm. Using lithography, plasma sputtering, anneal and magnetized to make the bridge structure having magnetic properties. We will use the Taguchi method (L422) to find the optimal design in different thicknesses of ferromagnetic and Anti-ferromagnetic in this experiment.
