以射頻磁控濺鍍鍍製多層有機矽阻障層研究;Investigation of organic silicon multilayer barrier films deposited by RF reactive magnetron sputtering

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題名:	以射頻磁控濺鍍鍍製多層有機矽阻障層研究;Investigation of organic silicon multilayer barrier films deposited by RF reactive magnetron sputtering
作者:	林彥安;LIN,YAN-AN
貢獻者:	光機電工程研究所
關鍵詞:	多層膜;有機氧化矽;阻障層;OLED;WVTR;HMDSO
日期:	2016-08-18
上傳時間:	2016-10-13 13:18:25 (UTC+8)
出版者:	國立中央大學
摘要:	有機發光二極體產業於近期內崛起，其特性為體積輕薄、大面積且可彎曲。然而當有機軟性元件被製作於塑膠基板上，材料將受到更嚴苛的挑戰。其中，有機半導體對水氣、氧氣十分敏感，元件易受水氣影響而產生暗點，此問題使目前影響有機發光二極體應用層面上存在極大的限制。為保護有機元件不受水氣影響而簡短使用壽命，製備極低水氣穿透率(<10-6 g/m2/day)及柔軟性佳之阻障層為開發有機發光二極體首要任務。本研究使用射頻磁控濺鍍有機單體HMDSO於PET基板上沉積含碳氧化矽薄膜阻障層及未完全斷鍵的HMDSO有機緩衝層交互堆疊。水氣阻障層是以磁控濺鍍槍、矽靶材及通入之有機單體HMDSO、氧氣在3 10-3torr腔體壓力下以電漿進行濺鍍，同時打斷HMDSO單體鍵結，與其共同反應聚合沉積高緻密性薄膜；而在有機緩衝層的鍍製過程中，採取提高HMDSO通量的方法提高有機薄膜當中線狀氧化矽結構比例，有助於薄膜附著在軟性基板，並提升薄膜可撓性。實驗以功率100W、6sccm氧氣、及0.4sccm HMDSO鍍製一緻密性高、孔洞性低、高光穿透率的水氣阻障薄膜，其中單層阻水膜水氣穿透率可低於10-2 g/m2/day，邃以100W功率、6sccm氧氣、及1sccm HMDSO鍍製結構中含甲基矽的柔軟緩衝層作為後續堆疊。研究發現經堆疊3對後薄膜水氣穿透率可降至原本約1/5，希望後續利用此有機無機薄膜堆疊方式沉積氧化矽多層膜，能符合有機元件阻水及可撓需求，應用於封裝產業。;The recent rise of flexible electronics industry aiming to deliver lightweight, flexible and large-area products has been extensively applied in the fields of display. However, many material and process-related challenges appear when flexible organic components are fabricated on polymer substrate. Among the challenges, moisture permeation could degrade and reduce the performance and durability of organic flexible organic light-emitting diode (OLED), making it difficult to be developed. In order to prolong OELD’s lifetime, water vapor transmittance rate (WVTR) must be below <10-6 g/m2/day. In this study, we used magnetron sputtering and hexamethyldisiloxane (HMDSO) to deposit SiO2:C buffer layer and SiO2 barrier film on PET substrate. Barrier film was deposited in high-density plasma produced by magnetron sputtering gun, oxygen, and fragmented HMDSO were mixed together under 1 10-3 torr to deposit dense films. Buffer layer was deposited in the same way as barrier film but rasing the HMDSO flow to improve the ratio of linear organic silicon oxide thin film structure which helps the film deposited on flexible substrate.In this study,we used 100 W RF power, 6sccm O2and 0.4 sccm HMDSO to deposit a film with low porosity and high transmittance. WVTR of the film reached the value of 0.05 g/m2/day, then we used100 W RF power, 6sccm O2and 1 sccm HMDSO to deposit a film which has rich methyl stack as buffer layer.In study we found three pairs of stacked film WVTR can be reduced to about 1/5 of single layer. It is believed that by combining organic and inorganic process, multilayer could meet OLED barrier requirement and will be used in OLED encapsulation industry in future.
顯示於類別:	[光機電工程研究所 ] 博碩士論文

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