中大機構典藏-NCU Institutional Repository-提供博碩士論文、考古題、期刊論文、研究計畫等下載:Item 987654321/71630
English  |  正體中文  |  简体中文  |  Items with full text/Total items : 80990/80990 (100%)
Visitors : 41662887      Online Users : 2007
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version


    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/71630


    Title: 以溶凝膠法製備鋁鈦共摻雜氧化鋅薄膜並研究其微結構,腐蝕及光電化學之特性;Microstructural, Corrosion, Photoelectrochemical properties of Al,Ti co-doped ZnO thin films prepared by sol-gel method
    Authors: 李承學;Lee,Cheng-Hsueh
    Contributors: 材料科學與工程研究所
    Keywords: 溶膠凝膠法;旋轉塗佈;鋁鈦共摻雜氧化鋅薄膜;光電化學;Sol-gel method;Spin-coating;Al, Ti codoped ZnO (TAZO);water splitting
    Date: 2016-08-18
    Issue Date: 2016-10-13 13:23:27 (UTC+8)
    Publisher: 國立中央大學
    Abstract: 本研究以溶膠凝膠法搭配旋轉塗佈技術於玻璃基板上成長鋁鈦共摻氧化鋅薄膜,研究內容嘗試改變摻雜前驅物之濃度探討氧化鋅系薄膜之微結構、光學、腐蝕特性並應用於光電化學分解水。研究結果顯示:所有試片經熱處理後,由X光繞射圖分析得知:薄膜皆為六方晶系纖維鋅礦結構且無二次相產生,以c軸(c-axis)為優選方向,由掃描式電子顯微鏡觀察得知,氧化鋅薄膜經摻鋁(0~4 at.%)、摻鈦(0~4 at.%)及共摻(0.0 ~1.0 at.%鈦和1 at.%鋁)都皆有晶粒細化現象。經UV-Vis光譜穿透分析得知,摻鋁薄膜平均透光率約88 %、摻鈦者為90 %,共摻則約89%。薄膜之電阻率以四點探針量測結果顯示,氧化鋅摻1 at.%鋁之有一最低電阻率(約42 Ω cm)、摻0.5at.%鈦之薄膜有一最低電阻率(約47 Ω cm),共摻1 at.%鋁與1 at.%鈦之薄膜則其電阻率則降至8.21 Ω cm。薄膜電化學性質上則以Tafel極化法來判斷材料抗腐蝕特性,結果顯示,隨鈦含量之增加則薄膜抗蝕性越佳。;In this study, we prepared the Al, Ti codoped ZnO thin film on glass substrates for photoelectrochemical (PEC) water splitting by sol-gel method using spin-coating technique. Effect of dopant concentrations on the microstructural, morphological, optical and electrochemical properties of ZnO-based thin films are investigated. Result from X-ray diffraction patterns, all samples belonged to wurtzite ZnO phase with a c-axis preferred orientation. Through scanning electron microscope, average particle size in TAZO decreased with increasing dopant content. Average optical transmittance measured by UV-Vis spectrophotometer indicated 88% for AZO, 90% for TZO and 89% for TAZO. The resistivity was measured at 42 Ω cm for AZO doped with 1 at.% Al, at 47 Ω cm for TZO doped with 0.5at.% Ti, at 8.21Ω cm for T1.00A1.0ZO co-doped 1 at.% Al with 1 at.% Ti analyzed by four-point probe. Through electrochemical measurements, we found that the dopant concentration of Al, Ti plays an important role in TAZO that affected photocurrent density, stability of water splitting and anti-corrosion.
    Appears in Collections:[Institute of Materials Science and Engineering] Electronic Thesis & Dissertation

    Files in This Item:

    File Description SizeFormat
    index.html0KbHTML502View/Open


    All items in NCUIR are protected by copyright, with all rights reserved.

    社群 sharing

    ::: Copyright National Central University. | 國立中央大學圖書館版權所有 | 收藏本站 | 設為首頁 | 最佳瀏覽畫面: 1024*768 | 建站日期:8-24-2009 :::
    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - 隱私權政策聲明