本研究成功的在電子迴旋共振系統中將預沉積在玻璃或矽基板上的銦奈米球經氧氣-氬氣混合電漿處理後於低溫 (180-280 ℃) 下成長出數種氧化銦奈米結構如垂直成長的奈米線、粗糙球殼、海膽狀成長的奈米線和實心球等。這些奈米結構的成長條件受氧分壓及基板溫度影響，並透過 SEM、TEM、XRD 分析不同形貌的奈米結構。由光激發光譜儀分析得知氧原子和氧分子在電漿中所佔比例將隨氧分壓改變並影響成長形貌。實驗結果顯示了在不同的氧分壓將會有不同的成長機制，並提出電場誘發擴散及應力誘發擴散兩種動力學模型做為不同氧分壓下低溫電漿輔助成長氧化銦奈米線可能的機制。 建立電漿輔助一維氧化銦成長模型後將此低溫製程應用於 HIT 及 CIGS 太陽能電池之抗反射結構，垂直成長的奈米線具有漸變折射率的特性能夠降低入射光反射率提高短路電流並進而提升光電轉換效率，在應用一維氧化銦抗反射結構後成功將 HIT 太陽能電池之反射率由 2.94% 降至 2.04%，短路電流 38.55 上升到 38.72 mA/cm2，光電轉換效率由 16.93% 上升至 17.08%。而 CIGS 太陽能電池之反射率由 6.04% 降至 4.06%，短路電流 31.49 提升至 32.36 mA/cm2，光電轉換效率由 11.32% 提升至 12.18 %。這兩種太陽能電池之抗反射結構的成功應用再次證明此製程可將氧化銦之一維結構整合至不耐高溫的電子元件製程上並成功降低入射光反射率。 ;Indium oxide (InO) nanostructures with vertical nanowires (NWs) , hallow sphere, urchin-like and indium sphere were grew by electron cyclotron resonance (ECR) system in a oxygen-argon plasma at low temperature (180-280 ℃) on silicon or glass substrates, which were pre-deposited indium nanoparticles. The morphologies of indium oxide nanostructures were controlled by oxygen partial pressure and substrate temperatures, characterized by SEM, TEM, XRD techniques. The optic emission spectra (OES) analysis evidenced the concentration of O atoms and molecules were related to the oxygen partial pressure and the morphologies. The results were revealed the different growth mechanism in various oxygen partial pressure. The kinetic models based on electron-field induced diffusion and stress induced diffusion were proposed to the mechanisms of low temperature plasma-assisted growth of indium oxide nanowires. The vertical InO NWs with gradient-index, which was reduced the reflectivity application as antireflection structure for HIT and CIGS solar cells. The enhancement of HIT solar cells with InO NWs antireflection structure in reflectivity (from 2.94% to 2.09%), short circuit current (from 38.55 to 38.72 mA/cm2) and performance (from 16.93 to 17.08%) without the decay of open circuit voltage and fill factor. The enhancement of CIGS solar cells with InO NWs antireflection structures in reflectivity (from 6.04% to 4.06 %), short circuit current (from 31.49 to 32.36 mA/cm2) and performance (from 11.32 to 12.18%) without the decay of open circuit voltage and fill factor.