快速退火生長高品質石墨烯;Growing the high quality graphene by rapid thermal annealing

NCU Institutional Repository > 工學院 > 能源工程研究所 > 博碩士論文 > Item 987654321/71725

請使用永久網址來引用或連結此文件: http://ir.lib.ncu.edu.tw/handle/987654321/71725

題名:	快速退火生長高品質石墨烯;Growing the high quality graphene by rapid thermal annealing
作者:	劉恩睿;Liu,En-Jui
貢獻者:	能源工程研究所
關鍵詞:	石墨烯;化學氣相沉積法;快速熱退火;類單晶結構;graphene;chemical vapor deposition method;rapid thermal process;similar single-crystal structure
日期:	2016-08-17
上傳時間:	2016-10-13 13:48:58 (UTC+8)
出版者:	國立中央大學
摘要:	石墨烯為近年受矚目的奈米材料，其具有優異的導電性、高穿透率還具有高強度的特性。現在製備石墨烯的做法有很多種類，其中以高溫的化學氣相沉積法最能生產出高品質石墨烯，但因為成本高、生長轉印時間久目前還無法工業量產，因此目前以縮短生長時間、大面積製程為現階段石墨烯科技重要的方向。本研究主要利用快速升溫系統(rapid thermal process, RTP)，將石墨烯生長時間從數小時縮短至一小時內，使用銅箔作為基板（substrate），透過拉曼訊號、電性去分析比較生長時間以及甲烷及氫氣流量的影響，利用原子力顯微鏡、X光繞射分析儀檢測退火溫度的不同探討對銅箔表面形貌的變化。為能使銅箔快速趨近於類單晶結構，利用1080°C非常趨近於銅的熔點的特性，使用1080°C退火10分鐘、1000°C生長15分鐘、甲烷及氫氣流量分別為10及20 (sccm)，製程時間為25分鐘，研究結果顯示石墨烯生長速度明顯比一般傳統退火方式還快，其電性為500~700 (Ω/□)、載子遷移率200~500(cm^2/Vs) ，拉曼 2D/G 比值大於1.5。 ;Graphene, the one of nanomaterials, gets the most attention in recent years. It possesses excellent electrical conductivity, high transmittance, and high strength characteristics. There are many processes to produce graphene nowadays. Among these processes, the high-temperature chemical vapor deposition method is the best one to produce the high quality graphene. However, the process can not to be applied in the industry production yet since it needs a high cost and long transfer time. Therefore, the issues of shortening the growth time and large-scale manufacturing process are the major researching trend in the graphene technology. This study uses a rapid thermal process (RTP) system for shortening the graphene growth time from several hours to one hour by using a copper foil as the substrate and also applying Raman spectrum and sheet resistance to examine the effects of growth time and flow volumes of methane and hydrogen. This work also uses an atomic force microscope and X-ray diffraction analyzer to assess the changes of annealing temperature versus the copper foil surface. Considering the annealing temperature is set at 1080 ° C which is very close to the melting point of the copper, for fast transferring the copper foil surface to similar single-crystal structure, the parameters of manufacturing graphene are set as：1080 ° C annealing temperature for 10 minutes, the growth time for 15 minutes at 1000°C, the flow rate of methane gas and hydrogen at 10:20, and the processing time for 25 minutes. The experimental results show that the present graphene growth time significantly faster than that of using traditional annealing approach. The sheet resistance of graphene quality using present RTP system is 500~700 (Ω/□), and the carrier mobility rate is in the range of 200~500(cm^2/Vs).
顯示於類別:	[能源工程研究所 ] 博碩士論文

文件中的檔案:

檔案	描述	大小	格式	瀏覽次數
index.html		0Kb	HTML	466	檢視/開啟

在NCUIR中所有的資料項目都受到原著作權保護.

社群 sharing

資料載入中.....