在本論文中，將提出以矽中介層架構設計用於4通道 × 25 Gbps光連接模組之發射端光學次組系統組裝。此模組的設計將以25 Gbps之傳輸速度為目標，提出相對應適用之高頻金屬傳輸線、光路設計和封裝技術。 本發射端次系統組裝，利用本實驗室濕蝕刻技術在矽基板上蝕刻出一可使光耦合之微型45度反射面溝槽。在光學平台尺寸設計上，並具有未來被動式對準高分子聚合物波導之功用。並再其反射面上蒸鍍一層金屬，使其對850 nm雷射光之反射率提高。並在此矽基光學平台上製程適用於25 Gbps之高頻傳輸線和錫金焊料，後段採用覆晶(Flip-chip)法將面射型雷射(VCSEL)封裝於此光學平台上。 此模組在光學特性上，其面射型雷射在-1 dB之光學準位的封裝誤差容忍度可達17 。在高頻特性上，單端式高頻傳輸線之反射損耗可維持在-20 dB以下、插入損耗則可在-0.4 dB以上之水準；差動式傳輸線在1 mm傳輸距離下也可達到反射損耗-20 dB以下、插入損耗-1 dB以上。並在眼圖量測中，其訊雜比(Signal Noise Ratio)可達到6.81 dB等級。 ;In this thesis, we proposed a design of transmitter optical sub-assembly for 4-channel x 25-Gbps optical interconnect module using silicon interposer structure. For the operating data rate of 25 Gbps, we design the applicable high frequency metal transmission lines, optical device and package technology. In fabrication of this transmitter optical sub-assembly, the wet etching technology from our laboratory is used to etch a micro groove with optical-coupling 45-degree reflector on the silicon substrate. In the design of this silicon optical bench (SiOB), the polymer waveguide could be passive aligned by the groove. Then the metal layer coated on the reflector would increase the coupling efficiency for the laser with wavelength of 850 nm. After metal transmission lines and AuSn solder bumping are mounted on the SiOB, the vertical-cavity-surface-emitting-laser (VCSEL) would be packaged on the SiOB by flip-chip packaging technology. The optical characteristic, -1 dB tolerance of optical level of VCSEL is . The high frequency electric characteristic, the single-ended transmission lines can keep the return loss below -20 dB and insertion loss of -0.4 dB above. For the 1mm-length differential transmission lines, the return loss also can be -20dB below and above -1 dB for insertion loss. The eye pattern of the transmitter optical sub-assembly, the signal to noise ratio (SNR) can achieve 6.81 dB level.
