電漿聚合膜之製備與應用;Fabrication and application of plasma polymerization films

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/71991

Title:	電漿聚合膜之製備與應用;Fabrication and application of plasma polymerization films
Authors:	廖偉博;Liao,Wei-Bo
Contributors:	照明與顯示科技研究所
Keywords:	電漿聚合;應力;阻障層;類鑽膜
Date:	2016-08-30
Issue Date:	2016-10-13 14:10:38 (UTC+8)
Publisher:	國立中央大學
Abstract:	利用電漿使有機氣體或有機蒸氣裂解並沉積在基板形成薄膜，此類薄膜階可稱之為電將聚合膜，電將聚合膜為三維交聯網狀結構的高分子薄膜，具高耐熱性、絕緣性、化學穩定、表面無孔洞缺陷且與大部分基板有良好的附著性。本研究使用六甲基二矽氧烷(Hexamethyldisiloxane, HMDSO)作為有機單體，將此單體通入真空腔體，並利用電漿將其解離，藉由調整電漿參數、有機單體流量及氧氣流量鍍製不同特性的電漿聚合薄膜，並分析其化學結構、元素比例、光學特性等等。以HMDSO鍍製的薄膜可以藉由分析薄膜線狀/籠狀比例預測薄膜應力，並將多層膜鍍在壓應力(-0.067 GPa)的電漿聚合膜，可抵銷多層膜70%的張應力，使得應力從0.06 GPa下降至0.018 GPa。塑膠基板不耐熱且水氣阻擋能力差，而水氣使得有機元件壽命下降，以HMDSO製備阻障層，在射頻電漿功率100W、0.625 sccm HMDSO及10 sccm氧氣沉積50 nm的阻障層，最佳WVTR為0.139 g/m2/day。類鑽膜(Diamond-like carbon, DLC)具備鑽石sp3結構及石墨sp2結構，具有極佳的機械性質，可以做為保護膜，然而其穿透率不佳，使其無法應用在光學元件上，本研究在類鑽膜製程中藉由HMDSO摻雜SiOx，製備厚度100 nm的DLC:SiOx薄膜，硬度達12.9 GPa且可見光平均穿透率高達88%。 ;Plasma polymerization use plasma to fragment monomer. Plasma polymer thin films are well known for their excellent properties such as heat resistant, insulation, chemical inertness and pinhole-free. In the study, SiOxCy thin films were deposited by plasma polymerization using hexamethyldisiloxane(HMDSO) and oxygen. The stress of SiOxCy thin films could be predicted by analyzing linear/cage structure ratio. The linear/cage structure ratio can be adjusted by changing the composite parameter, W[FM]c/[FM]m to control the stress of the deposited plasma polymer films. Multilayers, TiO2/SiO2/TiO2 were coated on a SiOxCy plasma polymer film (-0.067 GPa) herein, reducing their stress by 70 % from 0.06 GPa to 0.018 GPa. Water vapor barrier film deposited on PET substrate by plasma polymerization using mixture gas of HMDSO and O2. WVTR of the film which was deposited by 100 W RF power, 0.625 sccm of HMDSO and 10 sccm of O2 reach the value of 0.139 g/m2/day. Diamond-like carbon films were used to be protect layer. However, such films were opaque and could not be applied on optical element. In the research, we introduce HMDSO to dope SiOx in DLC. The thickness of DLC:SiOx thin film is about 100 nm. The hardness is 12.9 GPa and average transmittance in visible region is 88%.
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