增點式正方形網格開發及其在二維半導體元件模擬之應用;Development of point-added square element and its applications to 2-D semiconductor device simulation

NCU Institutional Repository > 資訊電機學院 > 電機工程研究所 > 博碩士論文 > Item 987654321/72092

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题名:	增點式正方形網格開發及其在二維半導體元件模擬之應用;Development of point-added square element and its applications to 2-D semiconductor device simulation
作者:	張博堯;Chang,Po-Yao
贡献者:	電機工程學系
关键词:	網格;半導體;模擬;mesh;semiconductor;simulation
日期:	2016-06-28
上传时间:	2016-10-13 14:26:01 (UTC+8)
出版者:	國立中央大學
摘要:	在本篇論文中，我們主要使用C語言，建立出一套可以更精確模擬半導體元件，其為增點式正方形網格。用來提升模擬二維半導體元件之不規則接面處的準確度，並且比較傳統之正方形網格與增點式正方形網格之差異性，接著使用簡易電阻作理論計算，再與模擬結果相互比較來驗證，即可得知此架構是否設計正確並可行。最後，我們將增點式正方形網格應用在不規則形狀之半導體元件及應用在MOS電容器結構上，並加以探討在半導體元件上之不規則接面處，其臨限電壓與能帶曲線圖的變化與影響。;In this thesis, we use C++ language to develop a new point-added square element for 2-D device simulation. It is used to improve the simulation of 2-D semiconductor device on irregular junction. Besides, we compare the difference between the traditional square element and point-added square element, and a simple resistor will be used to verify our result with theoretical value. After finishing these process, the point-added square element can be used in our simulation. In addition, we use the point-added square element to apply on the special semiconductor device, such as the resistor that it looks like a ring shape. We can also apply this new element on MOS capacitor. At last, we discuss the variation of threshold voltage and energy band on irregular junction of semiconductor device.
显示于类别:	[電機工程研究所] 博碩士論文

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