矽奈米線陣列之尺度能降低入射光因介質折射率不同所生成之反射，故其擁有良好的抗反射能力。因此在太陽能相關的設備上可以看到矽奈米線的應用，而另一方面奈米線陣列間大量的空隙，可讓奈米線陣列吸附氣體分子，因此也適合應用於氣體感測元件。不過，奈米線陣列有製作時分佈均勻性不足、設備昂貴等缺點。因此本研究的重點是降低奈米線陣列的生產成本與其良率之提升。本研究運用濕式化學蝕刻法運用NaBH4還原奈米銀並控制其形貌並沉積於矽基板上，最後再放入HF/H2O2中進行蝕刻。實驗中利用改變沉積方式、沉積與蝕刻分步進行，明顯改善金屬輔助蝕刻不均的問題，此想法明顯降低銀金屬因為團聚或是反應時液體擾動所造成的局部金屬輔助蝕刻，提升了矽奈米線整體蝕刻的均勻度。實驗結果證明此法所製之奈米柱陣列擁有比傳統濕式蝕刻更良好的均勻性。;The anti-reflection ability of silicon nanowire (SiNW) arrays are remarkable because the distance between SiNWs is similar to the wavelength of visible light, which can lower the incident light reflection caused by different visible medium. Nowadays, SiNW arrays are applied in solar Industry. There is lots of space between SiNW arrays. These structure can capture much more air. Although SiNW arrays come in many advantages, they are still limited by uniformity, and expensive equipment. This study is focus on how to lower the cost and promote the yield of the process. In this study, wet metal-assisted chemical etching is used to lower the cost. At the mean time, NaBH4 is used to control the surface morphology of sliver nanoparticles and they are deposed on the silicon substrate. Finally, the sliver deposed substrate is put into HF/H2O2 etching solution. There is a different depose method in this experiment. Using nano sliver particle and two-step etching process has lower the disturbance in etching solution. This method can make SiNW arrays can be more order than traditional wet metal-assisted chemical etching.