English  |  正體中文  |  简体中文  |  Items with full text/Total items : 74010/74010 (100%)
Visitors : 24627030      Online Users : 294
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version

    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/72345

    Title: 奈米銀沉澱-蝕刻二段式製作陣列矽奈米線之研究;The study of fabricating silicon nanowire arrays with nano-sliver particle and two-step method
    Authors: 黃以鈞;Huang,Yi-Chun
    Contributors: 機械工程學系
    Keywords: 矽奈米柱;金屬輔助蝕刻;奈米銀
    Date: 2016-06-16
    Issue Date: 2016-10-13 14:48:56 (UTC+8)
    Publisher: 國立中央大學
    Abstract: 矽奈米線陣列之尺度能降低入射光因介質折射率不同所生成之反射,故其擁有良好的抗反射能力。因此在太陽能相關的設備上可以看到矽奈米線的應用,而另一方面奈米線陣列間大量的空隙,可讓奈米線陣列吸附氣體分子,因此也適合應用於氣體感測元件。不過,奈米線陣列有製作時分佈均勻性不足、設備昂貴等缺點。因此本研究的重點是降低奈米線陣列的生產成本與其良率之提升。本研究運用濕式化學蝕刻法運用NaBH4還原奈米銀並控制其形貌並沉積於矽基板上,最後再放入HF/H2O2中進行蝕刻。實驗中利用改變沉積方式、沉積與蝕刻分步進行,明顯改善金屬輔助蝕刻不均的問題,此想法明顯降低銀金屬因為團聚或是反應時液體擾動所造成的局部金屬輔助蝕刻,提升了矽奈米線整體蝕刻的均勻度。實驗結果證明此法所製之奈米柱陣列擁有比傳統濕式蝕刻更良好的均勻性。;The anti-reflection ability of silicon nanowire (SiNW) arrays are remarkable because the distance between SiNWs is similar to the wavelength of visible light, which can lower the incident light reflection caused by different visible medium. Nowadays, SiNW arrays are applied in solar Industry. There is lots of space between SiNW arrays. These structure can capture much more air. Although SiNW arrays come in many advantages, they are still limited by uniformity, and expensive equipment. This study is focus on how to lower the cost and promote the yield of the process. In this study, wet metal-assisted chemical etching is used to lower the cost. At the mean time, NaBH4 is used to control the surface morphology of sliver nanoparticles and they are deposed on the silicon substrate. Finally, the sliver deposed substrate is put into HF/H2O2 etching solution. There is a different depose method in this experiment. Using nano sliver particle and two-step etching process has lower the disturbance in etching solution. This method can make SiNW arrays can be more order than traditional wet metal-assisted chemical etching.
    Appears in Collections:[機械工程研究所] 博碩士論文

    Files in This Item:

    File Description SizeFormat

    All items in NCUIR are protected by copyright, with all rights reserved.

    社群 sharing

    ::: Copyright National Central University. | 國立中央大學圖書館版權所有 | 收藏本站 | 設為首頁 | 最佳瀏覽畫面: 1024*768 | 建站日期:8-24-2009 :::
    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - 隱私權政策聲明