離子佈植摻雜氮化鎵薄膜的光、電、結構特性之分析; Optical, Electrical, and Structure Analysis of Ion-implanted GaN

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/7235

Title:	離子佈植摻雜氮化鎵薄膜的光、電、結構特性之分析;Optical, Electrical, and Structure Analysis of Ion-implanted GaN
Authors:	敦俊儒;Jun-Ru Dun
Contributors:	物理研究所
Date:	2001-07-09
Issue Date:	2009-09-22 10:53:00 (UTC+8)
Publisher:	國立中央大學圖書館
Abstract:	在結構特性上，鋅和鎂離子佈植造成的擴張形變(expansion strain) 經過計算分別約為0.0028和0.0034。X-Ray布拉格繞射結果顯示，在含氧氣體下進行活化的試片會造成壓縮形變(compressive strain)。在光性方面，在13k量測到的光激光譜的黃光峰值位置會隨著鋅摻雜量的增加產生藍移。另一方面，離子佈植的試片在含氧氣體下進行活化可以改善光性，量測到較強的光激光譜強度。在電性方面，鋅離子佈植試片的電子漂移率降低至約為83 cm2/V-s ~152 cm2/V-s。鎂離子佈植試片的電子漂移率降低至約為83 cm2/V-s ~147 cm2/V-s。關於矽離子佈植在氮化鎵結構上的影響，經過熱退火(anneal)的試片當熱退火條件改變時，在XRD 光譜上並沒有明顯的變化。這似乎意味著高摻雜量的離子佈植造成了無法修復的結構破壞。當熱退火溫度高於850℃時，試片的電性由p型轉變為n型，當熱退火溫度高於950℃時，試片的電性由p型轉變為n+型（n=-1X1019~ -4X1019cm-3），且其濃度為850℃下活化的試片的100倍。 In the properties of structure, the expansion of the strain made by implanted ions was calculated as 0.0028 and 0.0034 for Zn and Mg ion implanted samples respectively. XRD results show that samples annealed in oxygen-containing atmospheres will introduce compressive strain. The blue shift of YL peak position measured at 13K with increased dose density of Zn ions is observed. In the other hand, annealing done in oxygen-containing atmosphere can improve the optical property. The mobility of Zn implanted samples decreases about 83 cm2/V-s ~152 cm2/V-s. The mobility of Mg implanted samples decreases between 83 cm2/V-s to 147 cm2/V-s. There is no significance change of the XRD spectra when the annealing temperature and time changed. It seems means that high dose ion implantation introduced an unremovable structure damage. The II electrical properties transformed from p-type to n-type when the sample are annealed at the temperature higher than 850 oC and transformed to n+-type (n=-1X1019~-4X1019cm-3) when the temperature higher than 950 oC. When the annealing temperature is higher than 950 oC, the implanted samples have a factor of 100 times more free electrons than the samples annealed at the temperature lower than 850 oC.
Appears in Collections:	[Graduate Institute of Physics] Electronic Thesis & Dissertation

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