矽晶圓濕式去光阻技術的過去發展與現況

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Title:	矽晶圓濕式去光阻技術的過去發展與現況
Authors:	劉錡;Liu,Chi
Contributors:	機械工程學系
Keywords:	微影製程;濕式清洗製程;超音波輔助清洗;photolithography;wet cleaning;ultrasonic
Date:	2016-07-01
Issue Date:	2016-10-13 14:50:15 (UTC+8)
Publisher:	國立中央大學
Abstract:	從1965年至今，摩爾定律預言的準確度已經持續了超過半個世紀，預計將持續到2020年，關鍵在於微影製程(lithography)技術，而微影製程後的光阻或汙染物清洗也非常重要，但清洗完成後需要大量的超純水清洗，因此會產生大量的有機廢液，這些廢液會汙染環境且對人體健康有害。隨著環保意識的抬頭，加上未來製程上將朝向更低線寬與更高深寬比元件邁進，傳統濕式清洗製程面臨有機清洗液與晶圓界面間之表面張力極限問題，導致此清洗液無法適用於小尺寸溝渠內污染物的清洗，90年代開始，新技術逐漸被研發出來，來取代傳統清洗製程上有機溶劑的使用。超臨界二氧化碳清洗製程、臭氧水溶液去光阻製程也隨即被發展出來，有機溶劑也為了基底材料而不斷去做改善，在溶劑的配方上也不斷朝向使用低腐蝕性的溶劑或者添加抗蝕劑。而這些清洗技術也能夠搭配超音波(Ultrasonic)輔助，更能增加對光阻及其他汙染物的清除效率。 ;From 1965 to now, Moore′s Law has been continued for more than half a century. It estimate that can continue to 2020. The key point is in the lithography process. After the lithography process, the photoresist and others contamination removing is also very important. But the wafers need lots of DI water to rinse them. It makes lots of organic waste liquid, it will pollute the environment and harmful to human health. As the length scale of semiconductor devices advances to nanometer range, via structures and high aspect ratio, the effective penetration of aqueous will be more arduous. The other hand, the environmental awareness rise. New technology has been invented to replace traditional cleaning process since 1990. Supercritical carbon dioxide and DIO3 stripping process have been invented. The formulation of organic solvent were also improved for the wafer substrate material. These washing techniques can also work with ultrasonic assistance, it could increase photoresist and other contaminants removal efficiency.
Appears in Collections:	[Graduate Institute of Mechanical Engineering] Electronic Thesis & Dissertation

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