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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/72363


    Title: 石墨材料時變劣化微結構分析
    Authors: 廖思帆;Ssu-Fan,Liao
    Contributors: 機械工程學系在職專班
    Keywords: 太陽能電池;石墨;侵蝕;solar cell;graphite;etch
    Date: 2016-07-14
    Issue Date: 2016-10-13 14:50:21 (UTC+8)
    Publisher: 國立中央大學
    Abstract: 太陽能電池製程中使用了石墨材料當作載體,在經歷過長時間的使用後,石墨材料表面會因製程溶液的清洗而產生損傷;本研究主要針對石墨材料的表面劣化進行分析,以達成減緩石墨材料損耗為主要目的。
    本研究使用氫氟酸、鹽酸與氫氧化鉀等化學溶液,固定溶液濃度與容量,以測微器及光學顯微鏡量測石墨厚度變化及表面孔隙變化,由實驗數據進行石墨的表面孔洞侵蝕率分析。
    實驗結果觀察,在5%濃度與500c.c.的溶液設定條件下,使用鹽酸清洗石墨表面氮化矽層相對於氫氟酸與氫氧化鉀,就孔洞侵蝕速率而言,侵蝕速率最慢,孔洞侵蝕率約在1:1.6左右,與業界普遍使用的氫氟酸孔洞侵蝕率1:3.3相比,石墨孔洞侵蝕率縮小了50%,可間接提升石墨載體生命週期,達成減緩石墨材料損耗的目的。
    ;Graphite material is used in solar cell process, when during a long time to use, the material surface will be etched by chemical solution. In this study, we will find how to induce graphite material damage by the surface deterioration analysis.
    In this study, HF、HCl and KOH was used as experiment chemicals .Under same concentration and volume in this experiment , graphite’s thickness and aperture size observed by micrometer and optical microscope. The graphite surface hole etch can analyzed by experimental data.
    The result of experiments reveals the etching rate of HCl solution was less than that of HF and KOH while experiments condition at concentration 5% and volume 500c.c..The etching rate of HCl solution is ≈1:1.6 less than that of HF etching rate ≈1:3.3,HCl aperture may increase graphite lifetime.
    Appears in Collections:[機械工程學系碩士在職專班 ] 博碩士論文

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