本篇論文是利用光激發的方式研究氮化銦鎵/氮化鎵量子井結構 試片的發光機制。在此我們針對兩個主要問題進行探討：高溫處理對 試片光性之影響和試片的光增益量測與分析。 首先，藉由高溫爐退火處理，在不同活化時間條件下，探討含有 高銦成份之氮化銦鎵/氮化鎵量子井試片，其端面發光光譜中，數個波 峰其波長位移的原因。其次，利用空間光譜的量測技術，進一步分析 氮化銦鎵/氮化鎵量子井結構材料端面發光的光場分佈，以瞭解試片的 光侷限情況。 在光增益量測方面，我們可以利用改變光激發長度(variable excitation stripe length)的方法求得光增益值。更進一步地，我們用CO2 雷射將試片切成圓形以量測各個不同晶格方向的光增益值，並配合由 X 光實驗定出試片之晶格結構，我們可以分析試片在不同晶格方向光 增益的差異，並且得知在[ 0 1 2 1 ]的晶格方向可能有最大的光增益值。 此一實驗結果是和理論計算相吻合的。 This thesis presents the study of the properties of edge emission and the optical gain of the InGaN/GaN quantum well, which is produced by optical pumping. Also, the effect of the thermal annealing to the optical properties of the InGaN/GaN single quantum well with high indium content is analyzed. Then three mechanisms that induce the shift of the emission lines, after the thermal annealing occurs, are proposed. Samples of spatially resolved spectra are measured, and the experimental setup proposed in this thesis is refined. A sub-micron spatial resolution can be achieved without using a sub-micron translation stage. The experimental result is used to study the emission properties of the single quantum well samples. The study of how crystal orientation causes a strong piezoelectric effect on the InGaN/GaN quantum well has been a topic of much research. The result shows that the optical gain of the laser also depends on the orientation of the cavity. Theoretical studies indicate that the maximum optical gain can be obtained for the cavity of edge-emitting laser oriented along [ 0 1 2 1 ]-direction. In this thesis, the net modal gains of the InGaN/GaN multiple quantum well samples are measured by a variational stripe length method for the optically pumped cavity along each orientation on (0001) plane. The experimental result is used to confirm the theoretical study.
