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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/72445

    Title: MOCVD承載盤設計分析與實驗驗證;Design and Analysis of Susceptor for MOCVD with Experimental Verification
    Authors: 莊佳健;JIAN,ZHUANG JIA
    Contributors: 機械工程學系
    Keywords: 有機金屬化學氣相沉積;晶圓翹曲;溫度分布;載盤設計;MOCVD;Wafer warpage;Temperature distribution;Susceptor
    Date: 2016-08-22
    Issue Date: 2016-10-13 14:56:17 (UTC+8)
    Publisher: 國立中央大學
    Abstract: 目前氮化鎵(GaN)發光二極體(LED)的主要生成方式為在藍寶石晶圓上透過有機金屬氣相沉積(MOCVD)使其磊晶GaN薄膜。由於磊晶腔體內的零組件配置與加熱器設計等因素會影響晶圓表面溫度均勻度以及晶圓翹曲等問題。本研究利用有限元素法計算在MOCVD反應腔體中承載盤與晶圓的表面溫度分布以及由於晶圓表面溫度分布不均勻所產生的熱應力和薄膜與晶圓熱膨脹係數不匹配所導致的晶圓翹曲量,探討承載盤設計對晶圓與GaN薄膜上的溫度分布及晶圓翹曲的影響。
    ;Metal organic chemical vapor deposition (MOCVD) process is a technology in fabrication of GaN-based optoelectronic devices, such as LEDs. The substrate for growing GaN thin film is usually sapphire. Temperature distribution on the substrate surface is affected by the component and heater configuration in the MOCVD reaction chamber. In addition, wafer warpage is an issue in MOCVD process. The aim of this work is using finite element method (FEM) to systematically calculate the temperature distribution on the surface of susceptor and wafer substrate. Wafer warpage induced by mismatch in coefficient of thermal expansion between substrate and thin film is also investigated.
    Temperature distribution on the surface of susceptor and wafer substrate in a given MOCVD reactor is calculated by FEM simulation and measured in experiment. According to the temperature distribution on the wafer substrate placed on an original, plain susceptor, designed grooves are made on the back side of susceptor and on the bottom surface of wafer pockets to improve temperature uniformity on the wafer substrate by changing heat transfer conditions in the susceptor and between susceptor and wafer substrate. By doing so, it is expected to produce a better-quality film. Temperature difference in percentage between simulations and experimental results is less than 5%. Effectiveness of the constructed FEM model is validated by such a good agreement between simulations and experimental measurements. Warpage of wafer placed on plain susceptor and on grooved susceptor is also investigated in this study. Simulation results indicate the wafer warpage is effectively reduced by improving temperature uniformity on the wafer substrate through the groove design in susceptor.
    Appears in Collections:[機械工程研究所] 博碩士論文

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