English  |  正體中文  |  简体中文  |  Items with full text/Total items : 69937/69937 (100%)
Visitors : 23103050      Online Users : 676
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version


    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/72476


    Title: 電化學法成長鋁摻雜氧化鋅奈米柱及其在染料敏化太陽能電池之應用;Array of Al-doped ZnO nanorods grown by electrochemical method and their application to dye-sensitized solar cells (DSSCs)
    Authors: 周安莉;Choudhury,Amrita
    Contributors: 應用材料科學國際研究生碩士學位學程
    Keywords: Al doped ZnO;Dye-sensitized solar cell;Electrochemical deposition;Al doped ZnO;Dye-sensitized solar cell;Electrochemical deposition
    Date: 2016-07-27
    Issue Date: 2016-10-13 15:22:28 (UTC+8)
    Publisher: 國立中央大學
    Abstract: 鋁摻雜之氧化鋅奈米柱經電化學法成功製作於披覆及未披覆氧化鋅晶種層之銦錫氧化物基板‧由形貌、晶體結構及成分等分析,不同的鋁摻雜氧化鋅奈米柱之純氧化鋅奈米柱做為染料敏化太陽能電池的之陽極並進行能量轉換效率的比較 。當鍍液中的硝酸鋁濃度由10 µM 增加到1000 µM,我們可控制電化學沉積之鋁鋅沉積物之鋁含量由0.75 at.% 上升至 20.95 at.%。在有預先披覆氧化鋅晶種層之玻璃電鍍,在硝酸鋁濃度小於100 µM之摻鋁氧化鋅電鍍,奈米柱表現出垂直且密集地成長於基板上方;當導電玻璃沒有披覆氧化鋅晶種層,所得到之結果為較差結晶性與散亂排列的氧化鋅奈米柱;當硝酸鋁濃度大於250 µM之摻鋁氧化鋅電鍍,沒有發現奈米柱之形貌,取而代之的是片狀與團狀的混合物。
    不同的鋁摻雜氧化鋅樣品被應用在染料敏化電池的光陽極。由電池的電壓-電流曲線可以證實摻鋁氧化鋅奈米柱較純氧化鋅奈米柱具有較高的奈米柱單位密度可有效提升電池之電流密度與能量轉換效率。具有晶種層成長的摻鋁氧化鋅奈米柱,其最高的能量轉換效率為0.82 %,最低為0.18 %;沒有披覆晶種層的摻鋁氧化鋅奈米柱奇能量轉化效率最高為0.067 %。
    ;Array of Al-doped zinc oxides (AZOs) nanorods was successfully grown by electrochemical method on the glass previously coated with indium-tin oxide (ITO) and treated with or without a seed layer of ZnO. After examination of the morphology, structure and composition, variant samples of AZO were used as the raw material of photo anodes of dye-sensitized solar cells (DSSCs) instead of pure ZnO for comparison the energy conversion efficiency of DSSCs. Resulting from this electrochemical process we deposited the arrays of AZO with their Al-dopant varying in the 0.75 to 20.95 at. % while aluminium nitrate was added from 10 to 1000 µM in the baths. In the presence of ZnO-seed layer, arrays of vertical AZO nanorods were formed densely on the substrate from the baths with Al3+ content less than 100 µM; whereas in the absence of of ZnO-seed layer, poor crystalline AZO nanorods were grown randomly. As the concentration of aluminium nitrate in the bath higher than 250 µM, no deposits in nanorod array could be found but a mixture of cloudy and flaky structures deposited instead. Different AZO samples varying in Al-dopant concentrations were utilized to prepare the photoanode of DSSCs. The plot of current density against voltage (J–V) for various DSSCs indicated that the performance of the DSSCs made up of high dense array of AZO nanrods significantly improve the current densities and energy conversion efficiency (η) than those made of pure ZnO nanorods. In the presence of previous ZnO-seed layer, the energy conversion efficiency (η) is higher (i.e., 0.8191 % > 0.18%) for the DSSC made of arrays of AZO nanorods as compared with that made of pure ZnO. In the absence of ZnO-seed layer, the efficiency for that from AZO is only at 0.067%.
    Appears in Collections:[應用材料科學國際研究生碩士學位學程] 博碩士論文

    Files in This Item:

    File Description SizeFormat
    index.html0KbHTML690View/Open


    All items in NCUIR are protected by copyright, with all rights reserved.

    社群 sharing

    ::: Copyright National Central University. | 國立中央大學圖書館版權所有 | 收藏本站 | 設為首頁 | 最佳瀏覽畫面: 1024*768 | 建站日期:8-24-2009 :::
    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback  - 隱私權政策聲明