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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/7267


    Title: 氮化鎵異質結構場效電晶體中矽化鎢金屬接觸之溫度效應;Thermal Effect of WSi Metal Contacts for GaN HFETs
    Authors: 洪聖均;Sheng-Chun Hung
    Contributors: 物理研究所
    Keywords: 氮化鎵;矽化鎢;GaN HFET;WSi;Thermal
    Date: 2003-07-10
    Issue Date: 2009-09-22 10:53:50 (UTC+8)
    Publisher: 國立中央大學圖書館
    Abstract: 摘要 本論文針對氮化鎵異質結構場效電晶體以不同的金屬作為元件的閘極金屬之高溫操作的特性分析與探討。製作電元件一般的傳統製程是利用乾式蝕刻的技術,我們以質量較重的鎂離子經由離子佈植技術,以高能量,高摻雜量佈植進入材料內使其形成絕緣區。以簡化元件的製程。 在閘極金屬的選擇方面,我們採取共同濺鍍(co-sputter)的技術,藉由調變成長功率來控制矽化鎢金屬的矽含量。並發現隨著矽含在氮化鎵表面所形成的蕭特機位障會有下降的趨勢。且只要x值<0.5以下,其所形成的蕭特機位能障就會高於一般常用的閘極金屬,鎳/金(Ni/Au)。 在元件的高溫熱穩定性方面,以矽化鎢金屬或者是以鎳/金作為閘極金屬的元件都會有飽和電流以及直流增益隨著溫度升高而下降的特性,這應該與閘極金屬較無關係,而與材料本身之電子遷移率下降有關。但以矽化鎢作為閘極金屬的元件會有較好的電流調制較果以及其高溫熱穩定性也會較佳。 In this work WSi and Ti/Al/Ti/Au films were prepared using sputter and electron beam evaporation to form Schottky contacts as gate metal on GaN HFET.The thermal stability of WSi on GaN was also investigated under high temperature operation.The effect Schottky barrier height of WSi was greater than Ti/Al/Ti/Au when the composition of Si is less than 0.6.Result presented herein indicate that WSi gate may be much more thermal stable than Ti/Al/Ti/Au gate.
    Appears in Collections:[物理研究所] 博碩士論文

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