氮化銦鎵?氮化鎵多層量子井發光二極體之電性研究; The electrical properties of InGaN/GaN MQWs LED

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/7272

Title:	氮化銦鎵?氮化鎵多層量子井發光二極體之電性研究;The electrical properties of InGaN/GaN MQWs LED
Authors:	曾國偉;Kuo-Uei Tseng
Contributors:	物理研究所
Keywords:	氮化銦鎵?氮化鎵;多層量子井;電容電壓量測;MQW;C-V;InGaN/GaN
Date:	2002-06-07
Issue Date:	2009-09-22 10:53:57 (UTC+8)
Publisher:	國立中央大學圖書館
Abstract:	本篇論文主要是針對氮化銦鎵?氮化鎵多層量子井發光二極體（In0.23Ga0.77N/GaN MQWs LED）的結構以電容電壓量測與導納量測探討其電性。在本研究中，主要是利用電容電壓量測檢測多層量子井中的載子分佈情形。並分析在不同溫度與量測頻率的條件下，載子凍結與樣品所含的缺陷對於電容電壓量測之影響。另外，利用空乏近似法的計算來模擬電容電壓譜線，並探討在氮化銦鎵?氮化鎵異質結構中所產生的壓電場效應，對於多層量子井的能帶結構與載子分佈所帶來的影響。而由導納量測的結果發現，樣品中含有來自於n型摻雜的矽（Si）、p型摻雜的鎂（Mg）和一個可能與氮空缺（N-vacancy）有關的缺陷。 We use capacitance-voltage measurement and admittance spectroscopy to study the electrical properties of InGaN/GaN MQWs LED. We use C-V measurement to study the carrier distribution of MQWs. And we analyze the influence of the carrier freeze-out and defect on the different temperature and frequency C-V measurement. Besides, we study the influence of piezoelectric field on the band profile and carrier distribution of MQWs by depletion approximation. Then we found the n type dopant (Si), the p type dopant (Mg), and the defect N-vacancy related with admittance measurement.
Appears in Collections:	[Graduate Institute of Physics] Electronic Thesis & Dissertation

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