English  |  正體中文  |  简体中文  |  Items with full text/Total items : 75369/75369 (100%)
Visitors : 25561988      Online Users : 348
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version

    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/72864

    Title: 共濺鍍銅鈦薄膜之相分離演化機制與其對機械性質於3DIC接合的影響;Effect of Phase Separation Evolution on Mechanical Strength of Co-sputtering Cu(Ti) Thin Film in 3DIC Bonding
    Authors: 林柏丞;Lin, Po-Chen
    Contributors: 化學工程與材料工程學系
    Keywords: 共濺鍍銅鈦;推力測試;銅銅接合;相分離
    Date: 2017-01-11
    Issue Date: 2017-05-05 17:10:22 (UTC+8)
    Publisher: 國立中央大學
    Abstract: 近年來,三維積體電路在半導體封裝製程中受到廣大的討論,除了有可能突破莫爾定律的限制,並且有著降低能源損耗,縮小元件體積,以及提高元件效能等優點。然而在尺寸越來越小的趨勢之下,封裝及接合的可靠度將越來越受重視。晶圓接合就成為3D-IC技術中的關鍵步驟。在眾多不同種的晶圓接合技術中,近年來以銅對銅熱壓接合技術為3D-IC的主流,不外乎是因為它的製程簡易以及成本較低的兩個原因。本研究中將使用簡易的共濺鍍技術將鈦加入銅中鍍製薄膜,研究其退火後反應以及應用於晶圓接合的影響。第一部分中,以討論單一銅鈦薄膜退火400 oC後之特性改變為主。藉由ESCA的縱深分布可發現含有不同鈦含量的銅鈦薄膜會有不同程度的相分離現象。由結果可得在四種不同鈦含量中,以15%鈦的相分離現象最為明顯,並且擁有150nm的銅層於表面。
    ;In recent years, three-dimension integration technology has been widely discussed in regard to the packaging industry. Because of its many advantages such as reductions in power and device size, an increase in efficiency, and the miniaturization of electronic devices, the reliability of bonding in packaging is becoming gradually more evident. Wafer-level bonding is a key aspect of three-dimension integrated circuits, and Cu-Cu thermocompression bonding has become main stream because of its low cost and simple processes. In this study, a simple co-sputter technology was used to add Ti into Cu to deposit Cu(Ti) films. First, the characteristics of a single Cu(Ti) film after annealing at 400 oC were investigated. We obtained samples with various Ti concentrations, and through in-depth profile analysis we determined that the samples exhibited different levels of phase separation. The results showed that the Cu(Ti) alloy films with 15% Ti contained approximately 150 nm of pure Cu near their sample surfaces.
    Evidence for phase separation was obtained from a cross section of high-resolution transmission electron microscopy images, line-scan images, and mapping images. Moreover, the morphology of the sample plane view was observed through electron probe microanalysis images and mapping. In the experiment, the crystal characteristics and sheet resistance were detected through grazing incidence X-ray diffraction and a four-point probe. Theoretically, the calculation of the diffusivity of Ti in Cu is one order of magnitude smaller than that of Cu in Cu. Both calculations prove thermodynamically and kinetically that Ti is a dominant diffusing species that is segregated near SiO2, whereas Cu atoms are pushed toward the surface. In this study, the films were bonded through thermocompression. A Cu(Ti) film containing 15 at% Ti with a bonding time of 60 min at 400 oC exhibited the highest bonding strength with no void caused by phase separation. The relationships between bonding strength and the samples with various Ti concentrations were measured over different bonding times through shear testing.
    Finally, the evolution of phase separation and bonding were proposed. From the results, we know that phase separation of Cu and Ti in co-sputtered Cu(Ti) films provides a innovative method for forming high-quality Cu bonds.
    Appears in Collections:[化學工程與材料工程研究所] 博碩士論文

    Files in This Item:

    File Description SizeFormat

    All items in NCUIR are protected by copyright, with all rights reserved.

    社群 sharing

    ::: Copyright National Central University. | 國立中央大學圖書館版權所有 | 收藏本站 | 設為首頁 | 最佳瀏覽畫面: 1024*768 | 建站日期:8-24-2009 :::
    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - 隱私權政策聲明