我們利用多層量子點的特性來提高矽鍺發光特性，並利用改變間隔層厚度，提高載子侷限。再利用快速熱退火實驗改變量子點發光波段。最後製作矽鍺量子點發光二極體，並改變頓化層的條件，提高室溫發光效率。 We use self-assembled quantum dots to raise the optical efficiency of Ge/Si. And then we tune the wavelength of Ge/Si from 1.3um to 1.55 um with rapid thermal annealing. At last we have three different passivation processes of Ge/Si multi-layer quantum dots LED to improve our room optical efficiency.
