半導體黃光製程中六甲基二矽氮烷 之數量對顯影後圖型之影響

NCUIR > Engineering College > Executive Master of Mechanical Engineering > Electronic Thesis & Dissertation > Item 987654321/73049

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/73049

Title:	半導體黃光製程中六甲基二矽氮烷之數量對顯影後圖型之影響
Authors:	何建鋒;He, Jian-Fong
Contributors:	機械工程學系在職專班
Keywords:	六甲基二矽氮烷;Hexamethyldisilazane
Date:	2017-03-10
Issue Date:	2017-05-05 17:42:13 (UTC+8)
Publisher:	國立中央大學
Abstract:	摘要本篇論文主要研究探討半導體黃光製程的HMDS(六甲基二矽氮烷, Hexamethyldisilazane)在其製程中之應用。半導體黃光製程包括上底材(Priming)，也就是HMDS(六甲基矽氮烷, Hexamethyldisilazane)、光阻塗佈(Resist Coating)、曝光(Exposure)、顯影(Develop)、烘烤(Baking)、量測(Measure)。上述之黃光製程，每個步驟對最後要量測的值，都會因為當時的設定參數有所不同，而有不一樣的結果。而參數設定的最佳化，必須依照產品當時所需要的規格，來實驗做參數比較。本論文以探討HMDS(六甲基矽氮烷, Hexamethyldisilazane)的動機點是來自於客戶端產品的圖型量測值缺陷，而其缺陷情形為晶圓曝光顯影後之圖型倒塌。為了找出其圖型倒塌原因，將以最有可能發生原因的六甲基矽氮烷來做研究及實驗，以證明及改善製程不良。 ;Abstract The application of HMDS (Hexamethyldisilazane) in semiconductor lithography process is mainly explain in this report. In semiconductor Lithography process, it includes Priming, HMDS (Hexamethyldisilazane), Resist Coating, Exposure, Develop, Baking and Measurement. For semiconductor Lithography process, the value of the final measurement will very base on the parameter settings that were enter for each process. The optimization of parameter settings come from multiple experiments and compare results with each other. For experiment’s parameter settings, it is based on the required specifications depend on each product. The motivation of studying HMDS (Hexamethyldisilazane) comes from the defect of pattern from the product of customer. The reason of defect for pattern is because of the pattern of wafer exposure. In order to discover the reason of failure, this report will focus on the research of Hexamethylsilazane for improvement of process.
Appears in Collections:	[Executive Master of Mechanical Engineering] Electronic Thesis & Dissertation

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