近年來微機電和微光機電的系統的發展，帶領著我們走向微小化和積體化的元件，如何將微機電和微光機電的系統應用到實際的生活領域中，都是每位研究者所努力的目標。 本論文是以繞射理論為基礎，加上利用半導體製程技術與微機電系統之技術以製作薄膜光柵。首先在矽晶片上沉積低應力與高透光率之氮化矽，接著在氮化矽上製作二階式光柵後，把矽晶片浸泡於溫度80度、濃度為45%的氫氧化鉀溶液內去製作薄膜光柵，並利用光學顯微鏡、表面輪廓儀及原子力顯微鏡去取檢驗其製作品質，架設光學量測儀器量測此薄膜光柵之光學繞射情形。 本文於第一章大略敘述研究之動機，於第二章敘述光柵的基本原理與類型，實驗所使用到的技術會有電漿輔助化學氣相沉積法、低壓力氣相沉積法、微影製程、感應耦合電漿蝕刻及濕蝕刻，分別會在第三章與第四章敘述，將薄膜光柵之實驗結果列於第五章，並於第六章給予探討與未來展望。 Recently,much attention has been paid to miniaturizing an optical device. In this study，a diffraction grating is fabricated by the microoptoelectromechanical (MOEMS) technology. The miniaturization and integration of electronics have created a far-reaching technological revolution. In this paper, we fabricated transmission gratings and studied the diffraction effect of the grating periods. Transmission gratings were designed and fabricated by photolithography and anisotropic wet etching in a SiNX membrane upon a silicon substrate. The fabrication process is as follow. We deposit a low stress and high transmittance SiNX layer on both sides of a Si substrate using plasma-ehanced chemical-vapor deposition or low Pressure Chemical Vapor Deposition. Subsequent optical lithography is used to define grating structures which is transferred into the SiNX layer. Applying wet etching, anisotropic wet etching in a KOH solution results in a Si frame, where the upper SiNX layer serves as an etch stop. Then we build SiNX membranes gratings with dimensions of a few thousands of micrometer side length.The properties of SiNx membrane gratings were analyzed by the measurements of optical microscopy, surface profiler, AFM and optic equipment.
