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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/7356

    Title: 氮化鎵磊晶矽離子佈植活化度之研究;Activation efficiency analysis of Si-Implanted n-GaN
    Authors: 林平盛;Ping-Sheng Lin
    Contributors: 物理研究所
    Keywords: ;氮化鎵;氮化鋁;GaN;Si;AlN
    Date: 2005-06-24
    Issue Date: 2009-09-22 10:56:13 (UTC+8)
    Publisher: 國立中央大學圖書館
    Abstract: 摘 要 本實驗為研究氮化鋁保護層對活化矽離子佈植氮化鎵的影響。利用氮化鋁作為保護層,可減少氮化鎵在高溫熱退火中表面氮的損失,進而提升在較高活化溫度實現高活化率。 我們在室溫下利用氮化鋁靶材射頻濺鍍成長氮化鋁薄膜,發現增加濺鍍功率和氬氣流率可提高氮的含量,使得氮和鋁含量比例更接近實際的氮化鋁薄膜,其特性在高溫下更為穩定,所以更適合作為高溫活化的保護層。 在使用氮化鋁保護層活化矽離子佈植氮化鎵的實驗中,未加氮化鋁保護層的試片僅能做熱退火至1100℃,其活化率約為25%,在更高的熱退火溫度中,活化率因氮化鎵表面的破壞明顯下降。反觀有加氮化鋁保護層的試片則可做熱退火至1200℃,其活化率則明顯提升到75%。 Abstract The application of AlN capping layer on Si-implanted GaN was studied. Under high temperature annealing, AlN capping layer can decreases the loss of nitrogen from GaN surface, and achieve high activation efficiency. We use Aluminum Nitride (AlN) as target material of radio-frequency sputter to grow the AlN films at room temperature. While increasing RF power and gas flow rate of Ar, we find that can increases the percentage of nitrogen in AlN films. These AlN films are suitable for the capping layer due to the high stability under high temperature annealing environment. The activation efficiency is about 25% of samples without AlN capping layer annealed at 1100℃. The activation efficiency will obviously drop because of the destruction of the GaN surface at temperature higher than 1150℃. However, samples with AlN capping layer annealed at 1200℃, the activation efficiency can be 75%.
    Appears in Collections:[物理研究所] 博碩士論文

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