本實驗主要是研究以離子佈植方式摻雜氮離子和磷離子之後氧化鋅單晶基板的光性、結構、電性、與表面粗糙度之變化。利用原子力顯微鏡觀察表面粗糙度的變化後可以發現我們所使用的氧化鋅單晶基板在經過加熱超過800℃後表面的粗糙度會有增加的趨勢，在高溫氧氣環境下氧化鋅表面的破壞會比在氮氣環境下來的少。由沿著垂直晶面的X-ray量測結果，可以知道離子佈植會造成氧化鋅C軸產生擴張形變（expansion strain），在經過RTA 8000C 30s O2 的熱退火處理後可以發現被離子佈植所破壞的晶格有明顯的修復。在光性方面，將沒有離子佈值氧化鋅單晶基板利用RTA 800℃ 30s在氧氣的環境下做熱處理後會有明顯的綠光(510nm)產生，此推測綠光帶是來自於氧化鋅在高溫氧氣環境下產生氧原子的錯位或是在晶格中有氧原子等晶格上的缺陷，同樣地在氮離子佈植且加熱過後的樣品中，會產生中心波長在610nm的橘光光譜，此橘光帶可以在佈植過氮、磷、氬離子的試片上皆可以觀察到，因此橘光的成因，是由於離子佈植破壞晶格而產生缺陷所造成的。 在電性量測之結果，此離子佈植的製程並未將N型氧化鋅轉換成P型氧化鋅。 The structure, the optical properties, surface roughness and electrical characteristics of ZnO bulk doped with N and P ions by implantation were studied. We use the Atomic Force Microscope to determine the surface roughness. Surface roughness of ZnO bulk samples increased after 800℃ annealing. However, we observed that ZnO surface roughness annealing in oxygen ambient were smoother than in nitrogen ambient. It is very clear that the expansion strain of ZnO samples after implantation were determined by in-plane x-ray diffraction. This is because implantation usually damages the structure of sample. For the photoluminescence measurement, the peak position of undoped ZnO bulk annealing at 8000C for 30s in oxygen ambient by RTA is around 515nm. We suggest that the anti-site defect (OZn) or interstitial zinc defect dominated in the green emission of undoped ZnO bulk. N+-implanted ZnO bulk annealing at 8000C for 30s in oxygen ambient by RTA generates a 610nm orange spectrum at 10K. The orange luminescence was also observed in these samples doped with P and Ar ion by implantation. The 610nm peak of ZnO sample maybe comes from the structure damage. In term of electrical measurement, we obtained both the n-type ZnO semiconductor with and without implantation.
